Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors HK Noh, KJ Chang, B Ryu, WJ Lee
Physical Review B 84 (11), 115205, 2011
295 2011 Defect properties and -type doping efficiency in phosphorus-doped ZnO WJ Lee, J Kang, KJ Chang
Physical Review B 73 (2), 024117, 2006
246 2006 Formation of dopant-pair defects and doping efficiency in B-and P-doped silicon nanowires CY Moon, WJ Lee, KJ Chang
Nano letters 8 (10), 3086-3091, 2008
37 2008 Electronic structure of oxygen vacancy in crystalline InGaO3 (ZnO) m WJ Lee, B Ryu, KJ Chang
Physica B: Condensed Matter 404 (23-24), 4794-4796, 2009
30 2009 Structural and electronic properties of crystalline InGaO3 (ZnO) m WJ Lee, EA Choi, J Bang, B Ryu, KJ Chang
Applied Physics Letters 93 (11), 2008
29 2008 Electronic structure of phosphorus dopants in ZnO WJ Lee, J Kang, KJ Chang
Physica B: Condensed Matter 376, 699-702, 2006
27 2006 p-Type doping and compensation in ZnO WJ Lee, J Kang, KJ Chang
Journal of the Korean Physical Society 53 (1), 196-201, 2008
20 2008 Chemical bonding effect of Ge atoms on B diffusion in Si J Bang, J Kang, WJ Lee, KJ Chang, H Kim
Physical Review B 76 (6), 064118, 2007
17 2007 Enhanced electron-mediated ferromagnetism in Co-doped ZnO nanowires E Choi, WJ Lee, KJ Chang
Journal of Applied Physics 108 (2), 2010
15 2010 Hole doping effect on ferromagnetism in Mn-doped ZnO nanowires N Tsogbadrakh, EA Choi, WJ Lee, KJ Chang
Current applied physics 11 (2), 236-240, 2011
9 2011