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Didier DENTEL
Didier DENTEL
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Continuous germanene layer on Al (111)
M Derivaz, D Dentel, R Stephan, MC Hanf, A Mehdaoui, P Sonnet, C Pirri
Nano letters 15 (4), 2510-2516, 2015
6492015
Germanene on Al (111): interface electronic states and charge transfer
R Stephan, MC Hanf, M Derivaz, D Dentel, MC Asensio, J Avila, ...
The Journal of Physical Chemistry C 120 (3), 1580-1585, 2016
612016
Si adatom surface migration biasing by elastic strain gradients during capping of Ge or hut islands
L Kubler, D Dentel, JL Bischoff, C Ghica, C Ulhaq-Bouillet, J Werckmann
Applied physics letters 73 (8), 1053-1055, 1998
451998
Resonant Raman scattering by acoustic phonons in self-assembled quantum-dot multilayers: From a few layers to superlattices
M Cazayous, J Groenen, A Zwick, A Mlayah, R Carles, JL Bischoff, ...
Physical Review B 66 (19), 195320, 2002
402002
Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1− xGex morphologies: a RHEED and TEM study
D Dentel, JL Bischoff, L Kubler, J Werckmann, M Romeo
Journal of crystal growth 191 (4), 697-710, 1998
361998
The influence of hydrogen during the growth of Ge films on Si (001) by solid source molecular beam epitaxy
D Dentel, JL Bischoff, T Angot, L Kubler
Surface science 402, 211-214, 1998
321998
Grafting process of ethyltrimethoxysilane and polyphosphoric acid on calcium carbonate surface
J Kiehl, C Ben-Azzouz, D Dentel, M Derivaz, JL Bischoff, C Delaite, ...
Applied surface science 264, 864-871, 2013
302013
Bidimensional intercalation of Ge between SiC (0001) and a heteroepitaxial graphite top layer
L Kubler, K Aït-Mansour, M Diani, D Dentel, JL Bischoff, M Derivaz
Physical Review B 72 (11), 115319, 2005
292005
Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
R Loo, P Meunier-Beillard, D Vanhaeren, H Bender, M Caymax, ...
Journal of Applied Physics 90 (5), 2565-2574, 2001
272001
Tip-induced switch of germanene atomic structure
R Stephan, M Derivaz, MC Hanf, D Dentel, N Massara, A Mehdaoui, ...
The Journal of Physical Chemistry Letters 8 (18), 4587-4593, 2017
252017
Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes
S Chattopadhyay, LK Bera, CK Maiti, SK Ray, PK Bose, D Dentel, ...
Journal of Materials Science: Materials in Electronics 9, 403-407, 1998
241998
Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si (001)
D Dentel, JL Bischoff, L Kubler, M Stoffel, G Castelein
Journal of applied physics 93 (9), 5069-5074, 2003
232003
6H-SiC {0001} X-ray photoelectron diffraction characterization used for polarity determination
JL Bischoff, D Dentel, L Kubler
Surface science 415 (3), 392-402, 1998
191998
Two dimensional Si layer epitaxied on LaAlO3 (111) substrate: RHEED and XPS investigations
CB Azzouz, A Akremi, M Derivaz, JL Bischoff, M Zanouni, D Dentel
Journal of Physics: Conference Series 491 (1), 012003, 2014
162014
Epitaxy of Si nanocrystals by molecular beam epitaxy on a crystalline insulator LaAlO3 (0 0 1)
H Mortada, D Dentel, M Derivaz, JL Bischoff, E Denys, R Moubah, ...
Journal of crystal growth 323 (1), 247-249, 2011
152011
Si epitaxial growth on LaAlO3 (0 0 1)
H Mortada, M Derivaz, D Dentel, H Srour, JL Bischoff
Surface science 603 (9), L66-L69, 2009
112009
Structural investigation of the LaAlO3 (110) surface
H Mortada, M Derivaz, D Dentel, JL Bischoff
Thin Solid Films 517 (1), 441-443, 2008
112008
Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC (0 0 0 1)
K Aıt-Mansour, D Dentel, JL Bischoff, L Kubler, M Diani, A Barski, ...
Physica E: Low-dimensional Systems and Nanostructures 23 (3-4), 428-434, 2004
112004
Influence of the surface-termination of hexagonal SiC (0 0 0 1) on the temperature dependences of Ge growth modes and desorption
K Aıt-Mansour, L Kubler, D Dentel, JL Bischoff, M Diani, G Feuillet
Surface science 546 (1), 1-11, 2003
112003
Influence of molecular hydrogen on Ge island nucleation on Si (001)
D Dentel, L Vescan, O Chrétien, B Holländer
Journal of applied physics 88 (9), 5113-5118, 2000
112000
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