Frederic Boeuf
Frederic Boeuf
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Roadmap on silicon photonics
D Thomson, A Zilkie, JE Bowers, T Komljenovic, GT Reed, L Vivien, ...
Journal of Optics 18 (7), 073003, 2016
The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance
T Skotnicki, JA Hutchby, TJ King, HSP Wong, F Boeuf
IEEE Circuits and Devices Magazine 21 (1), 16-26, 2005
28nm FDSOI technology platform for high-speed low-voltage digital applications
N Planes, O Weber, V Barral, S Haendler, D Noblet, D Croain, M Bocat, ...
2012 Symposium on VLSI technology (VLSIT), 133-134, 2012
Stimulation of polariton photoluminescence in semiconductor microcavity
LS Dang, D Heger, R André, F Boeuf, R Romestain
Physical Review Letters 81 (18), 3920, 1998
Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
R Tauk, F Teppe, S Boubanga, D Coquillat, W Knap, YM Meziani, ...
Applied Physics Letters 89 (25), 2006
Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors
W Knap, F Teppe, Y Meziani, N Dyakonova, J Lusakowski, F Boeuf, ...
Applied Physics Letters 85 (4), 675-677, 2004
Innovative materials, devices, and CMOS technologies for low-power mobile multimedia
T Skotnicki, C Fenouillet-Beranger, C Gallon, F Boeuf, S Monfray, F Payet, ...
IEEE transactions on electron devices 55 (1), 96-130, 2007
Nickel vs. Cobalt Silicide integration for sub-50nm CMOS
B Froment, M Muller, H Brut, R Pantel, V Carron, H Achard, A Halimaoui, ...
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
Multi-UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ...
IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka
Nature Photonics 11 (8), 486-490, 2017
High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding
O Weber, O Faynot, F Andrieu, C Buj-Dufournet, F Allain, P Scheiblin, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ...
Nature Photonics 14 (6), 375-382, 2020
Germanium avalanche receiver for low power interconnects
L Virot, P Crozat, JM Fédéli, JM Hartmann, D Marris-Morini, E Cassan, ...
Nature communications 5 (1), 4957, 2014
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...
2006 International Electron Devices Meeting, 1-4, 2006
Silicon photonics R&D and manufacturing on 300-mm wafer platform
F Boeuf, S Cremer, E Temporiti, M Fere, M Shaw, C Baudot, N Vulliet, ...
Journal of lightwave technology 34 (2), 286-295, 2015
A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications
F Boeuf, S Cremer, N Vulliet, T Pinguet, A Mekis, G Masini, L Verslegers, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 13.3. 1-13.3. 4, 2013
Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction
L Virot, D Benedikovic, B Szelag, C Alonso-Ramos, B Karakus, ...
Optics Express 25 (16), 19487-19496, 2017
Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond
F Andrieu, O Weber, J Mazurier, O Thomas, JP Noel, ...
2010 Symposium on VLSI Technology, 57-58, 2010
Hybrid silicon photonic circuits and transceiver for 50 Gb/s NRZ transmission over single-mode fiber
G Denoyer, C Cole, A Santipo, R Russo, C Robinson, L Li, Y Zhou, B Park, ...
Journal of Lightwave Technology 33 (6), 1247-1254, 2015
Requirements for ultra-thin-film devices and new materials for the CMOS roadmap
C Fenouillet-Beranger, T Skotnicki, S Monfray, N Carriere, F Boeuf
Solid-State Electronics 48 (6), 961-967, 2004
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