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Saungeun Park
Saungeun Park
Adresse e-mail validée de utexas.edu
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Black phosphorus flexible thin film transistors at gighertz frequencies
W Zhu, S Park, MN Yogeesh, KM McNicholas, SR Bank, D Akinwande
Nano letters 16 (4), 2301-2306, 2016
1672016
Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors
S Rahimi, L Tao, SF Chowdhury, S Park, A Jouvray, S Buttress, ...
ACS nano 8 (10), 10471-10479, 2014
1122014
Inkjet printing of high performance transistors with micron order chemically set gaps
PM Grubb, H Subbaraman, S Park, D Akinwande, RT Chen
Scientific reports 7 (1), 1202, 2017
832017
Extremely high-frequency flexible graphene thin-film transistors
S Park, SH Shin, MN Yogeesh, AL Lee, S Rahimi, D Akinwande
IEEE Electron Device Letters 37 (4), 512-515, 2016
642016
Advancements in 2D flexible nanoelectronics: From material perspectives to RF applications
W Zhu, S Park, MN Yogeesh, D Akinwande
Flexible and Printed Electronics 2 (4), 043001, 2017
542017
Large reduction of hot spot temperature in graphene electronic devices with heat-spreading hexagonal boron nitride
D Choi, N Poudel, S Park, D Akinwande, SB Cronin, K Watanabe, ...
ACS applied materials & interfaces 10 (13), 11101-11107, 2018
462018
Transparent nanoscale polyimide gate dielectric for highly flexible electronics
S Park, HY Chang, S Rahimi, AL Lee, L Tao, D Akinwande
Advanced Electronic Materials 4 (2), 1700043, 2018
272018
Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate
S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ...
Carbon 68, 791-797, 2014
272014
Controlling the number of layers in graphene using the growth pressure
JH Cho, SR Na, S Park, D Akinwande, KM Liechti, MA Cullinan
Nanotechnology 30 (23), 235602, 2019
252019
High-frequency prospects of 2D nanomaterials for flexible nanoelectronics from baseband to sub-THz devices
S Park, W Zhu, HY Chang, MN Yogeesh, R Ghosh, SK Banerjee, ...
2015 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-32.1. 4, 2015
252015
Embedded gate CVD MoS2 microwave FETs
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, L Mathew, R Rao, ...
npj 2D Materials and Applications 1 (1), 26, 2017
242017
Quantitative scanning thermal microscopy of graphene devices on flexible polyimide substrates
MM Sadeghi, S Park, Y Huang, D Akinwande, Z Yao, J Murthy, L Shi
Journal of Applied Physics 119 (23), 2016
222016
Large-signal model of 2DFETs: Compact modeling of terminal charges and intrinsic capacitances
F Pasadas, EG Marin, A Toral-Lopez, FG Ruiz, A Godoy, S Park, ...
npj 2D Materials and Applications 3 (1), 47, 2019
172019
Towards the realization of graphene based flexible radio frequency receiver
MN Yogeesh, KN Parrish, J Lee, S Park, L Tao, D Akinwande
Electronics 4 (4), 933-946, 2015
152015
Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors
BC Worley, S Kim, S Park, PJ Rossky, D Akinwande, A Dodabalapur
Physical Chemistry Chemical Physics 17 (28), 18426-18430, 2015
112015
First demonstration of high performance 2D monolayer transistors on paper substrates
S Park, D Akinwande
2017 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2017
92017
Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor
M Kim, S Park, A Sanne, SK Banerjee, D Akinwande
2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018
72018
Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, D Akinwande, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
52017
Flexible 2D electronics using nanoscale transparent polyimide gate dielectric
S Park, HY Chang, S Rahimi, A Lee, D Akinwande
2015 73rd Annual Device Research Conference (DRC), 193-194, 2015
52015
Triangular-pulse measurement for hysteresis of high-performance and flexible graphene field-effect transistors
S Park, S Lee, G Mordi, S Jandhyala, MW Ha, JS Lee, L Colombo, ...
IEEE Electron Device Letters 35 (2), 277-279, 2014
52014
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