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Jörg Schoermann
Jörg Schoermann
Akademischer Rat, Universität Gießen
Adresse e-mail validée de exp1.physik.uni-giessen.de
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Tin-Assisted Synthesis of by Molecular Beam Epitaxy
M Kracht, A Karg, J Schörmann, M Weinhold, D Zink, F Michel, M Rohnke, ...
Physical Review Applied 8 (5), 054002, 2017
1532017
Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces
PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ...
Applied Physics Letters 91 (9), 2007
1412007
Molecular beam epitaxy of phase pure cubic InN
J Schörmann, DJ As, K Lischka, P Schley, R Goldhahn, SF Li, W Löffler, ...
Applied Physics Letters 89 (26), 2006
1072006
Room temperature green light emission from nonpolar cubic InGaN∕ GaN multi-quantum-wells
S Li, J Schörmann, DJ As, K Lischka
Applied physics letters 90 (7), 2007
872007
In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction
J Schörmann, S Potthast, DJ As, K Lischka
Applied Physics Letters 90 (4), 2007
862007
Optical properties of cubic GaN from 1 to 20 eV
M Feneberg, M Röppischer, C Cobet, N Esser, J Schörmann, T Schupp, ...
Physical Review B 85 (15), 155207, 2012
802012
UV photosensing characteristics of nanowire-based GaN/AlN superlattices
J Lahnemann, M Den Hertog, P Hille, M de la Mata, T Fournier, ...
Nano letters 16 (5), 3260-3267, 2016
612016
Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires
K Maier, A Helwig, G Müller, P Becker, P Hille, J Schörmann, J Teubert, ...
Sensors and Actuators B: Chemical 197, 87-94, 2014
612014
Anisotropic Optical Properties of Metastable Grown by Plasma-Assisted Molecular Beam Epitaxy
M Kracht, A Karg, M Feneberg, J Bläsing, J Schörmann, R Goldhahn, ...
Physical Review Applied 10 (2), 024047, 2018
562018
Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy
J Schörmann, P Hille, M Schäfer, J Müßener, P Becker, PJ Klar, ...
Journal of Applied Physics 114 (10), 2013
542013
InGaN/GaN nanowires as a new platform for photoelectrochemical sensors–detection of NADH
M Riedel, S Hölzel, P Hille, J Schörmann, M Eickhoff, F Lisdat
Biosensors and Bioelectronics 94, 298-304, 2017
532017
Ge doping of GaN beyond the Mott transition
A Ajay, J Schörmann, M Jiménez-Rodriguez, CB Lim, F Walther, ...
Journal of Physics D: Applied Physics 49 (44), 445301, 2016
522016
Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors
M Spies, MI Den Hertog, P Hille, J Schörmann, J Polaczyński, B Gayral, ...
Nano Letters 17 (7), 4231-4239, 2017
502017
Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations
PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ...
Physical Review B 77 (11), 115213, 2008
472008
Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band
CB Lim, A Ajay, C Bougerol, B Haas, J Schörmann, M Beeler, ...
Nanotechnology 26 (43), 435201, 2015
462015
Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures
M Beeler, P Hille, J Schormann, J Teubert, M De La Mata, J Arbiol, ...
Nano letters 14 (3), 1665-1673, 2014
462014
Influence of Polymorphism on the Electronic Structure of Ga2O3
JEN Swallow, C Vorwerk, P Mazzolini, P Vogt, O Bierwagen, A Karg, ...
Chemistry of Materials 32 (19), 8460-8470, 2020
432020
Dielectric function of cubic InN from the mid-infrared to the visible spectral range
P Schley, R Goldhahn, C Napierala, G Gobsch, J Schörmann, DJ As, ...
Semiconductor science and technology 23 (5), 055001, 2008
432008
Magnetic and structural properties of Gd-implanted zinc-blende GaN
FY Lo, A Melnikov, D Reuter, AD Wieck, V Ney, T Kammermeier, A Ney, ...
Applied physics letters 90 (26), 2007
412007
Near-infrared intersubband absorption in nonpolar cubic GaN∕ AlN superlattices
EA DeCuir, E Fred, MO Manasreh, J Schörmann, DJ As, K Lischka
Applied Physics Letters 91 (4), 2007
382007
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