Bertrand Ardouin
Bertrand Ardouin
XMOD Technologies
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HICUM parameter extraction methodology for a single transistor geometry
D Berger, D Cell, M Schroter, M Malorny, T Zimmer, B Ardouin
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 116-119, 2002
402002
A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results
S Frégonèse, S Lehmann, T Zimmer, M Schroter, D Céli, B Ardouin, ...
IEEE transactions on electron devices 53 (2), 287-295, 2006
302006
Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements
B Ardouin, T Zimmer, H Mnif, P Fouillat
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001
292001
Reliability-aware circuit design methodology for beyond-5G communication systems
C Mukherjee, B Ardouin, JY Dupuy, V Nodjiadjim, M Riet, T Zimmer, ...
IEEE Transactions on Device and Materials Reliability 17 (3), 490-506, 2017
232017
Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ...
IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018
202018
Transit time parameter extraction for the HICUM bipolar compact model
B Ardouin, T Zimmer, D Berger, D Celi, H Mnif, T Burdeau, P Fouillat
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat …, 2001
192001
SiGe HBT modeling for mm-wave circuit design
A Pawlak, S Lehmann, P Sakalas, J Krause, K Aufinger, B Ardouin, ...
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 149-156, 2015
182015
Modeling the self-heating effect in SiGe HBTs
H Mnif, T Zimmer, JL Battaglia, B Ardouin
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 96-99, 2002
172002
The HiCuM bipolar transistor model
M Schröter, B Ardouin
Compact Modeling, 231-267, 2010
132010
Limitations of on-wafer calibration and de-embedding methods in the sub-THz range
M Potereau, C Raya, M De Matos, S Fregonese, A Curutchet, M Zhang, ...
Journal of Computer and Communications 1 (06), 25, 2013
122013
Compact model validation strategies based on dedicated and benchmark circuit blocks for the mm-wave frequency range
B Ardouin, M Schroter, T Zimmer, K Aufinger, U Pfeiffer, C Raya, ...
2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2015
112015
Advancements on reliability-aware analog circuit design
B Ardouin, JY Dupuy, J Godin, V Nodjiadjim, M Riet, F Marc, GA Koné, ...
2012 Proceedings of the ESSCIRC (ESSCIRC), 46-52, 2012
112012
GNU simulators supporting Verilog-A compact model standardization
S Jahn, M Brinson, H Parruitte, B Ardouin, P Nenzi, L Lemaitre
MOS-AK meeting, Premstaetten, 2007
112007
A new approach for modelling the thermal behaviour of bipolar transistors
H Mnif, T Zimmer, JL Battaglia, B Ardouin, D Berger, D Celi
Proceedings of the Fourth IEEE International Caracas Conference on Devices …, 2002
112002
Modeling and parameter extraction of SiGe: C HBT's with HICUM for the emerging terahertz era
B Ardouin, C Raya, M Schroter, A Pawlak, D Céli, F Pourchon, K Aufinger, ...
The 5th European Microwave Integrated Circuits Conference, 25-28, 2010
92010
Scalable compact modeling of III–V DHBTs: Prospective figures of merit toward terahertz operation
C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ...
IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018
82018
A mm-wave CMOS LC-VCO with vertically-coiled solenoid inductor
H Gao, J Liu, J Wang, L Sun, B Ardouin
IEEE Microwave and Wireless Components Letters 26 (4), 282-284, 2016
72016
Meander type transmission line design for on-wafer TRL calibration
M Potéreau, M Deng, C Raya, B Ardouin, K Aufinger, C Ayela, ...
2016 46th European Microwave Conference (EuMC), 381-384, 2016
62016
Contribution à la modélisation et à la caractérisation en hautes fréquences des transistors bipolaires à hétérojonction Si/SiGe
B Ardouin
Bordeaux 1, 2001
62001
A multiscale TCAD approach for the simulation of InP DHBTs and the extraction of their transit times
X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Frégonèse, ...
IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019
52019
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