Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM LM Almeida, KRA Sasaki, C Caillat, M Aoulaiche, N Collaert, M Jurczak, ... Solid-state electronics 90, 149-154, 2013 | 25 | 2013 |
Reconfigurable back enhanced (BE) SOI MOSFET used to build a logic inverter L Yojo, RC Rangel, KRA Sasaki, JA Martino 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2017 | 23 | 2017 |
Back Enhanced (BE) SOI MOSFET under non-conventional bias conditions LS Yojo, RC Rangel, KRA Sasaki, JA Martino 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 16 | 2017 |
Temperature influence on UTBOX 1T-DRAM using GIDL for writing operation KRA Sasaki, LM Almeida, JA Martino, M Aoulaiche, E Simoen, C Claeys 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 15 | 2012 |
Tradeoff between the transistor reconfigurable technology and the zero-temperature-coefficient (ZTC) bias point on BESOI MOSFET KRA Sasaki, RC Rangel, LS Yojo, JA Martino Microelectronics Journal 94, 104658, 2019 | 13 | 2019 |
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications KRA Sasaki, T Nicoletti, LM Almeida, SD dos Santos, A Nissimoff, ... Solid-state electronics 97, 30-37, 2014 | 13 | 2014 |
Back Enhanced (BE) SOI MOSFET Light Sensor JA PADOVESE, LS YOJO, RC RANGEL, KRA SASAKI, JA MARTINO XIV Workshop on Semiconductors and Micro & Nano Technology, 2019 | 12 | 2019 |
Back Enhanced SOI MOSFET as UV Light Sensor JA PADOVESE, LS YOJO, RC RANGEL, KRA SASAKI, JA MARTINO 2018 33th Symposium on Microelectronics Technology and Devices (SBMicro) 1, 1-4, 2018 | 12 | 2018 |
Study of ΒΕSOI MOSFET reconfigurable transistor for biosensing application LS Yojo, RC Rangel, KRA Sasaki, JA Martino ECS Journal of Solid State Science and Technology 10 (2), 027004, 2021 | 11 | 2021 |
Optimization of the permittivity-based BE SOI biosensor LS Yojo, RC Rangel, KRA Sasaki, JA Martino 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2018 | 11 | 2018 |
Optimization of Source/Drain Schottky Barrier Height on BE SOI MOSFET LS Yojo, RC Rangel, KRA Sasaki, JA Martino ECS Transactions 85 (8), 79, 2018 | 11 | 2018 |
Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs KRA SASAKI, MB MANINI, JA MARTINO, M AOULAICHE, E SIMOEN, ... 2014 International Caribbean Conference on Devices, Circuits and Systems …, 2014 | 11 | 2014 |
Silicon Film Thickness Influence on Enhanced Dynamic Threshold UTBB SOI nMOSFETs KRA SASAKI, M AOULAICHE, E SIMOEN, C CLAEYS, JA MARTINO SBMicro2014 – 29th Symposium on Microelectronics Technology and Devices, 2014 | 11* | 2014 |
Enhanced dynamic threshold voltage UTBB SOI nMOSFETs KRA Sasaki, MB Manini, E Simoen, C Claeys, JA Martino Solid-State Electronics 112, 19-23, 2015 | 10 | 2015 |
Enhanced Dynamic Threshold Voltage UTBB SOI nMOSFETs KRA SASAKI, MB MANINI, E SIMOEN, C CLAEYS, JA MARTINO EUROSOI 2014 - X Workshop of the Thematic Network on Silicon On Insulator …, 2014 | 10 | 2014 |
One transistor floating body RAM performances on UTBOX devices using the BJT effect LM Almeida, KRA Sasaki, M Aoulaiche, E Simoen, C Clayes, JA Martino Journal of Integrated Circuits and Systems 7 (2), 113-120, 2012 | 10 | 2012 |
Influence of biological element permittivity on BE (Back Enhanced) SOI MOSFETs LS Yojo, RC Rangel, KRA Sasaki, J Martino 2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2018 | 9 | 2018 |
Is there a kink effect in FDSOI MOSFETs? HJ Park, M Bawedin, K Sasaki, JA Martino, S Cristoloveanu 2017 Joint International EUROSOI Workshop and International Conference on …, 2017 | 9 | 2017 |
Comparison between low and high read bias in FB-RAM on UTBOX FDSOI devices LM Almeida, M Aoulaiche, KRA Sasaki, T Nicoletti, MGC de Andrade, ... 2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012 | 9 | 2012 |
Analysis of UTBOX 1T-DRAM Memory Cell at High Temperatures LM Almeida, KR Sasaki, M Aoulaiche, E Simoen, C Claeys, JA Martino ECS Transactions 39 (1), 61, 2011 | 9 | 2011 |