Suivre
Takayuki Nozaki
Takayuki Nozaki
National Institute of Industrial Science and Technology
Adresse e-mail validée de aist.go.jp
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Année
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
T Maruyama, Y Shiota, T Nozaki, K Ohta, N Toda, M Mizuguchi, ...
Nature nanotechnology 4 (3), 158-161, 2009
14522009
Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
Y Shiota, T Nozaki, F Bonell, S Murakami, T Shinjo, Y Suzuki
Nature materials 11 (1), 39-43, 2012
8522012
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
T Nozaki, Y Shiota, M Shiraishi, T Shinjo, Y Suzuki
Applied Physics Letters 96 (2), 2010
3112010
Voltage-assisted magnetization switching in ultrathin Fe80Co20 alloy layers
Y Shiota, T Maruyama, T Nozaki, T Shinjo, M Shiraishi, Y Suzuki
Applied Physics Express 2 (6), 063001, 2009
2662009
Spin injection into a graphene thin film at room temperature
M Ohishi, M Shiraishi, R Nouchi, T Nozaki, T Shinjo, Y Suzuki
Japanese Journal of Applied Physics 46 (7L), L605, 2007
2662007
Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
T Nozaki, Y Shiota, S Miwa, S Murakami, F Bonell, S Ishibashi, H Kubota, ...
Nature Physics 8 (6), 491-496, 2012
2632012
Highly sensitive nanoscale spin-torque diode
S Miwa, S Ishibashi, H Tomita, T Nozaki, E Tamura, K Ando, N Mizuochi, ...
Nature materials 13 (1), 50-56, 2014
2172014
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
T Nozaki, A Kozioł-Rachwał, W Skowroński, V Zayets, Y Shiota, S Tamaru, ...
Physical Review Applied 5 (4), 044006, 2016
1872016
Structural characterization of bioengineered human corneal endothelial cell sheets fabricated on temperature-responsive culture dishes
T Ide, K Nishida, M Yamato, T Sumide, M Utsumi, T Nozaki, A Kikuchi, ...
Biomaterials 27 (4), 607-614, 2006
1792006
Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
Y Jiang, T Nozaki, S Abe, T Ochiai, A Hirohata, N Tezuka, K Inomata
Nature materials 3 (6), 361-364, 2004
1752004
Spin-torque oscillator based on magnetic tunnel junction with a perpendicularly magnetized free layer and in-plane magnetized polarizer
H Kubota, K Yakushiji, A Fukushima, S Tamaru, M Konoto, T Nozaki, ...
Applied Physics Express 6 (10), 103003, 2013
1672013
Voltage controlled interfacial magnetism through platinum orbits
S Miwa, M Suzuki, M Tsujikawa, K Matsuda, T Nozaki, K Tanaka, ...
Nature communications 8 (1), 15848, 2017
1552017
Quantitative evaluation of voltage-induced magnetic anisotropy change by magnetoresistance measurement
Y Shiota, S Murakami, F Bonell, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Express 4 (4), 043005, 2011
1492011
Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films
F Bonell, S Murakami, Y Shiota, T Nozaki, T Shinjo, Y Suzuki
Applied Physics Letters 98 (23), 2011
1342011
Effective reduction of critical current for current-induced magnetization switching by a Ru layer insertion in an exchange-biased spin valve
Y Jiang, S Abe, T Ochiai, T Nozaki, A Hirohata, N Tezuka, K Inomata
Physical review letters 92 (16), 167204, 2004
1302004
Quantum oscillation of the tunneling conductance in fully epitaxial double barrier magnetic tunnel junctions
T Nozaki, N Tezuka, K Inomata
Physical review letters 96 (2), 027208, 2006
1182006
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque MRAM
T Nozaki, T Yamamoto, S Miwa, M Tsujikawa, M Shirai, S Yuasa, Y Suzuki
Micromachines 10 (5), 327, 2019
1152019
Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer
H Kubota, S Ishibashi, T Saruya, T Nozaki, A Fukushima, K Yakushiji, ...
Journal of Applied Physics 111 (7), 2012
1082012
Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
T Nozaki, A Kozioł-Rachwał, M Tsujikawa, Y Shiota, X Xu, T Ohkubo, ...
NPG Asia Materials 9 (12), e451-e451, 2017
1072017
Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization
Y Shiota, T Nozaki, S Tamaru, K Yakushiji, H Kubota, A Fukushima, ...
Applied Physics Express 9 (1), 013001, 2015
1072015
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