B. Sermage
B. Sermage
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Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity
JM Gérard, B Sermage, B Gayral, B Legrand, E Costard, V Thierry-Mieg
Physical review letters 81 (5), 1110, 1998
Enhanced radiative recombination of free excitons in GaAs quantum wells
B Deveaud, F Clérot, N Roy, K Satzke, B Sermage, DS Katzer
Physical review letters 67 (17), 2355, 1991
Optical investigation of a new type of valence-band configuration in In x Ga 1− x As-GaAs strained superlattices
JY Marzin, MN Charasse, B Sermage
Physical Review B 31 (12), 8298, 1985
Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
G Danan, B Etienne, F Mollot, R Planel, AM Jean-Louis, F Alexandre, ...
Physical Review B 35 (12), 6207, 1987
InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si
JM Gérard, O Cabrol, B Sermage
Applied physics letters 68 (22), 3123-3125, 1996
Microcavity polariton spin quantum beats without a magnetic field: A manifestation of Coulomb exchange in dense and polarized polariton systems
P Renucci, T Amand, X Marie, P Senellart, J Bloch, B Sermage, ...
Physical Review B 72 (7), 075317, 2005
Time-resolved spontaneous emission of excitons in a microcavity: Behavior of the individual exciton-photon mixed states
B Sermage, S Long, I Abram, JY Marzin, J Bloch, R Planel, V Thierry-Mieg
Physical Review B 53 (24), 16516, 1996
Microcavity polariton depopulation as evidence for stimulated scattering
P Senellart, J Bloch, B Sermage, JY Marzin
Physical Review B 62 (24), R16263, 2000
Time-resolved probing of the Purcell effect for InAs quantum boxes in GaAs microdisks
B Gayral, JM Gérard, B Sermage, A Lemaıtre, C Dupuis
Applied Physics Letters 78 (19), 2828-2830, 2001
Photoexcited carrier lifetime and Auger recombination in 1.3‐μm InGaAsP
B Sermage, HJ Eichler, JP Heritage, RJ Nelson, NK Dutta
Applied Physics Letters 42 (3), 259-261, 1983
High‐purity ZnSe obtained by metalorganic chemical vapor deposition epitaxy
P Blanconnier, JF Hogrel, AM Jean‐Louis, B Sermage
Journal of Applied Physics 52 (11), 6895-6900, 1981
Tunnelling and relaxation in coupled quantum wells
B Deveaud, F Clerot, A Chomette, A Regreny, R Ferreira, G Bastard, ...
EPL (Europhysics Letters) 11 (4), 367, 1990
Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
A Izrael, B Sermage, JY Marzin, A Ougazzaden, R Azoulay, J Etrillard, ...
Applied physics letters 56 (9), 830-832, 1990
Excitons and polaritons in ZnSe
B Sermage, G Fishman
Physical Review B 23 (10), 5107, 1981
Temperature dependence of carrier lifetime and Auger recombination in 1.3 μm InGaAsP
B Sermage, JP Heritage, NK Dutta
Journal of applied physics 57 (12), 5443-5449, 1985
Reabsorption of the excitonic luminescence in direct band gap semiconductors
B Sermage, M Voos
Physical Review B 15 (8), 3935, 1977
Linear polarisation inversion: A signature of Coulomb scattering of cavity polaritons with opposite spins
KV Kavokin, P Renucci, T Amand, X Marie, P Senellart, J Bloch, ...
physica status solidi (c) 2 (2), 763-767, 2005
Optical properties of ZnS nanowires synthesized via simple physical evaporation
X Zhang, Y Zhang, Y Song, Z Wang, D Yu
Physica E: Low-dimensional Systems and Nanostructures 28 (1), 1-6, 2005
Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAs
B Sermage, D Chemla, D Sivco, A Cho
IEEE journal of quantum electronics 22 (6), 774-780, 1986
Resonant Brillouin scattering of polaritons in ZnSe: Heavy and light excitons
B Sermage, G Fishman
Physical Review Letters 43 (14), 1043, 1979
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