| Electromigration in metals PS Ho, T Kwok Reports on Progress in Physics 52 (3), 301, 1989 | 852 | 1989 |
| Low dielectric constant materials for ULSI interconnects M Morgen, ET Ryan, JH Zhao, C Hu, T Cho, PS Ho Annual Review of Materials Science 30 (1), 645-680, 2000 | 481 | 2000 |
| Thin films-interdiffusion and reactions KN Tu, JW Mayer, JM Poate Wiley, New York, 1978 | 465 | 1978 |
| Electromigration reliability issues in dual-damascene Cu interconnections ET Ogawa, KD Lee, VA Blaschke, PS Ho IEEE Transactions on reliability 51 (4), 403-419, 2002 | 322 | 2002 |
| Low-dielectric-constant materials for ULSI interlayer-dielectric applications WW Lee, PS Ho MRS bulletin 22 (10), 19-27, 1997 | 311 | 1997 |
| Plasma processing of low-k dielectrics MR Baklanov, JF de Marneffe, D Shamiryan, AM Urbanowicz, H Shi, ... Journal of Applied Physics 113 (4), 4, 2013 | 285 | 2013 |
| Chemical bonding and reaction at metal/polymer interfaces PS Ho, PO Hahn, JW Bartha, GW Rubloff, FK LeGoues, BD Silverman Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985 | 266 | 1985 |
| Auger study of preferred sputtering on binary alloy surfaces PS Ho, JE Lewis, HS Wildman, JK Howard Surface Science 57 (1), 393-405, 1976 | 250 | 1976 |
| Numerical study on influences of barrier arrangements on dielectric barrier discharge characteristics WS Kang, JM Park, Y Kim, SH Hong IEEE Transactions on Plasma Science 31 (4), 504-510, 2003 | 240* | 2003 |
| Impact of near-surface thermal stresses on interfacial reliability of through-silicon vias for 3-D interconnects SK Ryu, KH Lu, X Zhang, JH Im, PS Ho, R Huang IEEE Transactions on Device and Materials Reliability 11 (1), 35-43, 2010 | 236 | 2010 |
| Thermo-mechanical reliability of 3-D ICs containing through silicon vias KH Lu, X Zhang, SK Ryu, J Im, R Huang, PS Ho 2009 59th Electronic Components and Technology Conference, 630-634, 2009 | 229 | 2009 |
| Electromigration in Al (Cu) two‐level structures: Effect of Cu and kinetics of damage formation CK Hu, MB Small, PS Ho Journal of applied physics 74 (2), 969-978, 1993 | 214 | 1993 |
| Investigation of diffusion and electromigration parameters for Cu–Sn intermetallic compounds in Pb-free solders using simulated annealing B Chao, SH Chae, X Zhang, KH Lu, J Im, PS Ho Acta Materialia 55 (8), 2805-2814, 2007 | 210 | 2007 |
| Complex formation and growth at the Cr–and Cu–polyimide interface R Haight, RC White, BD Silverman, PS Ho Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (4 …, 1988 | 210 | 1988 |
| Equilibrium structures of Si (100) stepped surfaces TW Poon, S Yip, PS Ho, FF Abraham Physical review letters 65 (17), 2161, 1990 | 208 | 1990 |
| Effects of enhanced diffusion on preferred sputtering of homogeneous alloy surfaces PS Ho Surface Science 72 (2), 253-263, 1978 | 180 | 1978 |
| Intermetallic compounds of Al and transitions metals: Effect of electromigration in 1–2‐μm‐wide lines JK Howard, JF White, PS Ho Journal of Applied Physics 49 (7), 4083-4093, 1978 | 174 | 1978 |
| Motion of inclusion induced by a direct current and a temperature gradient PS Ho Journal of Applied Physics 41 (1), 64-68, 1970 | 174 | 1970 |
| Chemical bonding and electronic structure of Si PS Ho, GW Rubloff, JE Lewis, VL Moruzzi, AR Williams Physical Review B 22 (10), 4784, 1980 | 173 | 1980 |
| Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si (111) M Liehr, PE Schmid, FK LeGoues, PS Ho Physical review letters 54 (19), 2139, 1985 | 169 | 1985 |
