The advanced unified defect model for Schottky barrier formation WE Spicer, Z Liliental‐Weber, E Weber, N Newman, T Kendelewicz, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988
497 1988 Bi‐epitaxial grain boundary junctions in YBa2 Cu3 O7 K Char, MS Colclough, SM Garrison, N Newman, G Zaharchuk
Applied physics letters 59 (6), 733-735, 1991
409 1991 High-field superconductivity in alloyed V Braccini, A Gurevich, JE Giencke, MC Jewell, CB Eom, DC Larbalestier, ...
Physical Review B 71 (1), 012504, 2005
326 2005 Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN XY Cui, JE Medvedeva, B Delley, AJ Freeman, N Newman, C Stampfl
Physical review letters 95 (25), 256404, 2005
275 2005 1.54‐μm photoluminescence from Er‐implanted GaN and AlN RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ...
Applied Physics Letters 65 (8), 992-994, 1994
272 1994 Observation of ferromagnetism above 900K in Cr–GaN and Cr–AlN HX Liu, SY Wu, RK Singh, L Gu, DJ Smith, N Newman, NR Dilley, ...
Applied Physics Letters 85 (18), 4076-4078, 2004
256 2004 Scanning tunneling microscopy studies of Si donors ( JF Zheng, X Liu, N Newman, ER Weber, DF Ogletree, M Salmeron
Physical review letters 72 (10), 1490, 1994
255 1994 High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering N Newman, WG Lyons
Journal of Superconductivity 6, 119-160, 1993
247 1993 Method of forming grain boundary junctions in high temperature superconductor films K Char, SM Garrison, N Newman, GG Zaharchuk
US Patent 5,366,953, 1994
223 1994 Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films SY Wu, HX Liu, L Gu, RK Singh, L Budd, M Van Schilfgaarde, ...
Applied Physics Letters 82 (18), 3047-3049, 2003
219 2003 p ‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of MgM Rubin, N Newman, JS Chan, TC Fu, JT Ross
Applied physics letters 64 (1), 64-66, 1994
218 1994 Electrical study of Schottky barriers on atomically clean GaAs (110) surfaces N Newman, M Van Schilfgaarde, T Kendelwicz, MD Williams, WE Spicer
Physical Review B 33 (2), 1146, 1986
192 1986 Spin lifetimes of electrons injected into GaAs and GaN S Krishnamurthy, M Van Schilfgaarde, N Newman
Applied physics letters 83 (9), 1761-1763, 2003
149 2003 On the Fermi level pinning behavior of metal/III–V semiconductor interfaces N Newman, WE Spicer, T Kendelewicz, I Lindau
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986
138 1986 Microwave surface resistance of epitaxial YBa2 Cu3 O7 thin films on sapphire K Char, N Newman, SM Garrison, RW Barton, RC Taber, SS Laderman, ...
Applied physics letters 57 (4), 409-411, 1990
137 1990 Observation of two in‐plane epitaxial states in YBa2 Cu3 O7−δ films on yttria‐stabilized ZrO2 SM Garrison, N Newman, BF Cole, K Char, RW Barton
Applied physics letters 58 (19), 2168-2170, 1991
128 1991 Large‐area YBa2 Cu3 O7−δ thin films on sapphire for microwave applications BF Cole, GC Liang, N Newman, K Char, G Zaharchuk, JS Martens
Applied physics letters 61 (14), 1727-1729, 1992
127 1992 Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films N Newman, J Ross, M Rubin
Applied physics letters 62 (11), 1242-1244, 1993
120 1993 YBa2 Cu3 O7−δ superconducting films with low microwave surface resistance over large areas N Newman, K Char, SM Garrison, RW Barton, RC Taber, CB Eom, ...
Applied physics letters 57 (5), 520-522, 1990
116 1990 Experimental study of ZY Fan, DG Hinks, N Newman, JM Rowell
Applied Physics Letters 79 (1), 87-89, 2001
115 2001 