Fabrice Gourbilleau
Fabrice Gourbilleau
Directeur de Recherche, CIMAP
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nanostructured multilayers by reactive magnetron sputtering
F Gourbilleau, X Portier, C Ternon, P Voivenel, R Madelon, R Rizk
Applied Physics Letters 78 (20), 3058-3060, 2001
Excitable Er fraction and quenching phenomena in Er-doped layers containing Si nanoclusters
B Garrido, C García, SY Seo, P Pellegrino, D Navarro-Urrios, N Daldosso, ...
Physical Review B 76 (24), 245308, 2007
Optimized conditions for an enhanced coupling rate between Er ions and Si nanoclusters for an improved 1.54-μm emission
F Gourbilleau, M Levalois, C Dufour, J Vicens, R Rizk
Journal of Applied Physics 95 (7), 3717-3722, 2004
Low temperature deposition of nanocrystalline silicon carbide thin films
S Kerdiles, A Berthelot, F Gourbilleau, R Rizk
Applied physics letters 76 (17), 2373-2375, 2000
Absorption cross section and signal enhancement in Er-doped Si nanocluster rib-loaded waveguides
N Daldosso, D Navarro-Urrios, M Melchiorri, L Pavesi, F Gourbilleau, ...
Applied Physics Letters 86 (26), 261103, 2005
Structural and optical characterization of pure Si-rich nitride thin films
O Debieu, RP Nalini, J Cardin, X Portier, J Perrière, F Gourbilleau
Nanoscale research letters 8 (1), 1-13, 2013
Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters
O Jambois, F Gourbilleau, AJ Kenyon, J Montserrat, R Rizk, B Garrido
Optics express 18 (3), 2230-2235, 2010
An original approach for the fabrication of Si/SiO2 multilayers using reactive magnetron sputtering
C Ternon, F Gourbilleau, X Portier, P Voivenel, C Dufour
Thin Solid Films 419 (1-2), 5-10, 2002
Photochemical preparation of silver nanoparticles supported on zeolite crystals
M Zaarour, M El Roz, B Dong, R Retoux, R Aad, J Cardin, C Dufour, ...
Langmuir 30 (21), 6250-6256, 2014
Current transport and electroluminescence mechanisms in thin films containing Si nanocluster-sensitized erbium ions
O Jambois, Y Berencen, K Hijazi, M Wojdak, AJ Kenyon, F Gourbilleau, ...
Journal of Applied Physics 106 (6), 063526, 2009
Dense and nanometric electronic excitations induced by swift heavy ions in an ionic CaF 2 crystal: Evidence for two thresholds of damage creation
M Toulemonde, A Benyagoub, C Trautmann, N Khalfaoui, M Boccanfuso, ...
Physical Review B 85 (5), 054112, 2012
Distance dependent interaction as the limiting factor for Si nanocluster to Er energy transfer in silica
B Garrido, C García, P Pellegrino, D Navarro-Urrios, N Daldosso, ...
Applied physics letters 89 (16), 163103, 2006
Spectroscopic ellipsometry analyses of sputtered nanostructures
S Charvet, R Madelon, F Gourbilleau, R Rizk
Journal of Applied Physics 85 (8), 4032-4039, 1999
Nanometric size effects on irradiation of tin oxide powder
A Berthelot, S Hemon, F Gourbilleau, C Dufour, E Dooryhee, E Paumier
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998
Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices
E Talbot, R Lardé, F Gourbilleau, C Dufour, P Pareige
EPL (Europhysics Letters) 87 (2), 26004, 2009
Silicon-rich multilayers: A promising material for the third generation of solar cell
F Gourbilleau, C Ternon, D Maestre, O Palais, C Dufour
Journal of Applied Physics 106 (1), 013501, 2009
Room-temperature 1.54 μm photoluminescence from Er-doped Si-rich silica layers obtained by reactive magnetron sputtering
F Gourbilleau, C Dufour, M Levalois, J Vicens, R Rizk, C Sada, F Enrichi, ...
Journal of applied physics 94 (6), 3869-3874, 2003
On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals
G Zatryb, A Podhorodecki, J Misiewicz, J Cardin, F Gourbilleau
Nanoscale research letters 6 (1), 1-8, 2011
Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at
D Navarro-Urrios, A Pitanti, N Daldosso, F Gourbilleau, R Rizk, G Pucker, ...
Applied physics letters 92 (5), 051101, 2008
Er-coupled Si nanocluster waveguide
N Daldosso, D Navarro-Urrios, M Melchiorri, C Garca, P Pellegrino, ...
IEEE Journal of selected topics in quantum electronics 12 (6), 1607-1617, 2006
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