Nitin Prasad

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Leonard F. RegisterProfessor of Electrical and Computer EngineeringAdresse e-mail validée de austin.utexas.edu
Emanuel TutucProfessor, The University of Texas at AustinAdresse e-mail validée de mer.utexas.edu
Kyounghwan KimAppleAdresse e-mail validée de utexas.edu
Sangwoo KangIntel CorporationAdresse e-mail validée de intel.com
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoAdresse e-mail validée de physics.utexas.edu
Anjan ChakravortyAssociate Professor of Electrical Engineering, IIT MadrasAdresse e-mail validée de ee.iitm.ac.in
Jens SaakSenior Scientist, Max Planck Institute for Dynamics of Complex Technical SystemsAdresse e-mail validée de mpi-magdeburg.mpg.de
Martin KöhlerTechnical associate, PhD Student, Max Planck Institute for Dynamics of Complex Technical SystemsAdresse e-mail validée de mpi-magdeburg.mpg.de
Mark StilesFellow, National Institute of Standards and TechnologyAdresse e-mail validée de nist.gov
Advait MadhavanFaculty Specialist, University of Maryland, National Institute of Standards and TechnologyAdresse e-mail validée de nist.gov
Matthew W. DanielsAlternative Computing Group, National Institute of Standards and TechnologyAdresse e-mail validée de nist.gov

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Nitin Prasad

University of Maryland and National Institute of Standards and Technology

Adresse e-mail validée de nist.gov

Beyond-CMOS technology Neuromorphic computing


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ... Physical review letters 120 (17), 177702, 2018	89	2018
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe₂ Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017	50	2017
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano letters 16 (8), 4975-4981, 2016	38	2016
Spin-Conserving Resonant Tunneling in Twist-Controlled WSe₂-hBN-WSe₂ Heterostructures K Kim, N Prasad, HCP Movva, GW Burg, Y Wang, S Larentis, T Taniguchi, ... Nano letters 18 (9), 5967-5973, 2018	23	2018
Conversion of spin current into charge current in a topological insulator: Role of the interface R Dey, N Prasad, LF Register, SK Banerjee Physical Review B 97 (17), 174406, 2018	18	2018
ReS₂-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 245701, 2017	11	2017
Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ... Journal of Physics D: Applied Physics 50 (38), 383002, 2017	10	2017
An improved quasi-saturation and charge model for SOI-LDMOS transistors N Prasad, P Sarangapani, KNS Nikhil, N DasGupta, A DasGupta, ... IEEE Transactions on Electron Devices 62 (3), 919-926, 2015	8	2015
A Nano-satellite Mission to Study Charged Particle Precipitation from the Van Allen Radiation Belts caused due to Seismo-Electromagnetic Emissions N Sivadas, A Gulati, D Kannapan, AS Yalamarthy, A Dhiman, A Bhagoji, ... arXiv preprint arXiv:1411.6034, 2014	7	2014
Multi-barrier inter-layer tunnel field-effect transistor N Prasad, X Mou, LF Register, SK Banerjee 2016 IEEE International Electron Devices Meeting (IEDM), 30.4. 1-30.4. 4, 2016	4	2016
Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse N Prasad, T Pramanik, SK Banerjee, LF Register Journal of Applied Physics 127 (9), 093904, 2020	2	2020
Interfacing CM. ESS with Python B Baran, M Köhler, N Prasad, J Saak Max Planck Institute Magdeburg, 2013	2	2013
Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions JM Goodwill, N Prasad, BD Hoskins, MW Daniels, A Madhavan, L Wan, ... arXiv preprint arXiv:2112.09159, 2021	1	2021
Associative Memories Using Complex-Valued Hopfield Networks Based on Spin-Torque Oscillator Arrays N Prasad, P Mukim, A Madhavan, MD Stiles arXiv preprint arXiv:2112.03358, 2021	1	2021
Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors N Prasad, SK Banerjee, LF Register 2018 International Conference on Simulation of Semiconductor Processes and …, 2018	1	2018
Double bilayer graphene-WSe₂ resonant tunneling heterostructures with high interlayer current densities and peak-to-valley ratios GW Burg, B Fallahazad, K Kim, N Prasad, T Taniguchi, K Watanabe, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017	1	2017
Insights into interlayer tunnel FET performance improvement: Lessons learned from graphene hexagonal boron nitride heterostructures S Kang, N Prasad, HCP Movva, A Rai, K Kim, T Taniguchi, K Watanabe, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016	1	2016
Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures N Prasad, GW Burg, K Watanabe, T Taniguchi, LF Register, E Tutuc Physical Review Letters 127 (11), 117701, 2021		2021
Method to enhance resonant interlayer tunneling in bilayer-graphene systems N Prasad, X Wu, SK Banerjee, LF Register Journal of Computational Electronics, 2021		2021
Observation of an emerging equilibrium indirect exciton condensate in double bilayer graphene-WSe2 heterostructures GW Burg, N Prasad, LF Register, E Tutuc, D Efimkin, AH MacDonald, ... 10th International Conference on Spontaneous Coherence in Excitonic Systems, 2020		2020

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