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Mohamed A Osman
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Temperature dependence of the thermal conductivity of single-wall carbon nanotubes
MA Osman, D Srivastava
Nanotechnology 12 (1), 21, 2001
6032001
Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs
MA Osman, DK Ferry
Physical Review B 36 (11), 6018, 1987
2661987
Investigation of ballistic transport through resonant-tunnelling quantum wells using Wigner function approach
U Ravaioli, MA Osman, W Pötz, N Kluksdahl, DK Ferry
Physica B+ C 134 (1-3), 36-40, 1985
1201985
Thermal conductivity of Y-junction carbon nanotubes
A Cummings, M Osman, D Srivastava, M Menon
Physical Review B 70 (11), 115405, 2004
892004
Pulsed‐plasma‐polymerized aniline thin films
PA Tamirisa, KC Liddell, PD Pedrow, MA Osman
Journal of applied polymer science 93 (3), 1317-1325, 2004
672004
Molecular dynamics simulation of heat pulse propagation in single-wall carbon nanotubes
MA Osman, D Srivastava
Physical Review B 72 (12), 125413, 2005
662005
Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET's
AA Osman, MA Osman, NS Dogan, MA Imam
IEEE Transactions on Electron Devices 42 (9), 1709-1711, 1995
571995
Electron‐hole interaction and high‐field transport of photoexcited electrons in GaAs
MA Osman, DK Ferry
Journal of applied physics 61 (12), 5330-5336, 1987
561987
Investigation of high temperature effects on MOSFET transconductance (g/sub m/)
AA Osman, MA Osman
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth …, 1998
461998
Picosecond Electronics and Optoelectronics II
MA Osman, HL Grubin, P Lugli, MJ Kann, DK Ferry
Springer Series in Electronics and Photonics, 1987
30*1987
Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects
MA Imam, MA Osman, AA Osman
Microelectronics Reliability 39 (4), 487-495, 1999
291999
Nanodiffraction from platelet defects in diamond
JM Cowley, MA Osman, P Humble
Ultramicroscopy 15 (4), 311-318, 1984
291984
DC modeling and characterization of AlGaAs/GaAs heterojunction bipolar transistors for high-temperature applications
CT Dikmen, NS Dogan, MA Osman
IEEE journal of solid-state circuits 29 (2), 108-116, 1994
281994
Modeling and experimental comparison of pulsed plasma deposition of aniline
LV Shepsis, PD Pedrow, R Mahalingam, MA Osman
Thin solid films 385 (1), 11-21, 2001
272001
Hole drift velocity in the warped band model of GaAs
N Nintunze, MA Osman
Semiconductor science and technology 10 (1), 11, 1995
271995
Plasma-enhanced metal-organic chemical vapor deposition (PEMOCVD) of catalytic coatings for fuel cell reformers
R Dhar, PD Pedrow, KNC Liddell, Q Ming, TM Moeller, MA Osman
IEEE transactions on plasma science 33 (1), 138-146, 2005
252005
Influence of evanescent states on quantum transport through an array of elastic scatterers
M Cahay, S Bandyopadhyay, MA Osman, HL Grubin
Surface science 228 (1-3), 301-305, 1990
251990
Monte Carlo study of hole transport in silicon
J Dewey, MA Osman
Journal of applied physics 74 (5), 3219-3223, 1993
241993
An area efficient body contact for low and high voltage SOI MOSFET devices
A Daghighi, M Osman, MA Imam
Solid-State Electronics 52 (2), 196-204, 2008
222008
An extended tanh law MOSFET model for high temperature circuit simulation
AA Osman, MA Osman, NS Dogan, MA Imam
IEEE journal of solid-state circuits 30 (2), 147-150, 1995
211995
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