Thierry Conard
Thierry Conard
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Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers
ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ...
Journal of Applied Physics 92 (12), 7168-7174, 2002
Effective electrical passivation of Ge(100) for high- gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 082904, 2007
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Ultra low-EOT (5 Å) gate-first and gate-last high performance CMOS achieved by gate-electrode optimization
LÅ Ragnarsson, Z Li, J Tseng, T Schram, E Rohr, MJ Cho, T Kauerauf, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
RL Puurunen, W Vandervorst, WFA Besling, O Richard, H Bender, ...
Journal of applied physics 96 (9), 4878-4889, 2004
Passivation of Ge (100)∕ GeO2∕ high-κ Gate Stacks Using Thermal Oxide Treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy
H Nohira, W Tsai, W Besling, E Young, J Pétry, T Conard, W Vandervorst, ...
Journal of non-crystalline solids 303 (1), 83-87, 2002
Deposition of on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 064104, 2005
Mathematical description of atomic layer deposition and its application to the nucleation and growth of gate dielectric layers
MA Alam, ML Green
Journal of applied physics 94 (5), 3403-3413, 2003
Characterisation of ALCVD Al2O3–ZrO2 nanolaminates, link between electrical and structural properties
WFA Besling, E Young, T Conard, C Zhao, R Carter, W Vandervorst, ...
Journal of non-crystalline solids 303 (1), 123-133, 2002
A study of the influence of typical wet chemical treatments on the germanium wafer surface
B Onsia, T Conard, S De Gendt, M Heyns, I Hoflijk, P Mertens, M Meuris, ...
Solid State Phenomena 103 (104), 27-30, 2005
Characterization of Cu surface cleaning by hydrogen plasma
MR Baklanov, DG Shamiryan, Z Tökei, GP Beyer, T Conard, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
Dielectric properties of dysprosium-and scandium-doped hafnium dioxide thin films
C Adelmann, V Sriramkumar, S Van Elshocht, P Lehnen, T Conard, ...
Applied Physics Letters 91 (16), 162902, 2007
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
M Caymax, S Van Elshocht, M Houssa, A Delabie, T Conard, M Meuris, ...
Materials Science and Engineering: B 135 (3), 256-260, 2006
Effect of hafnium germanate formation on the interface of /germanium metal oxide semiconductor devices
S Van Elshocht, M Caymax, T Conard, S De Gendt, I Hoflijk, M Houssa, ...
Applied physics letters 88 (14), 141904, 2006
Complex admittance analysis for high-κ dielectric stacks
G Apostolopoulos, G Vellianitis, A Dimoulas, JC Hooker, T Conard
Applied physics letters 84 (2), 260-262, 2004
Interfacial properties of on silicon
YS Lin, R Puthenkovilakam, JP Chang, C Bouldin, I Levin, NV Nguyen, ...
Journal of applied physics 93 (10), 5945-5952, 2003
Ch. Dieker, EK Evangelou, S. Galata, M. Houssa, and MM Heyns
A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ...
Thin Solid Films 515, 6337, 2007
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
W Tsai, RJ Carter, H Nohira, M Caymax, T Conard, V Cosnier, S DeGendt, ...
Microelectronic Engineering 65 (3), 259-272, 2003
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