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Satyanand Nalam
Satyanand Nalam
Intel
Verified email at virginia.edu
Title
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Cited by
Year
Analyzing static and dynamic write margin for nanometer SRAMs
J Wang, S Nalam, BH Calhoun
Proceedings of the 2008 international symposium on Low Power Electronics …, 2008
2502008
Impact of circuit assist methods on margin and performance in 6T SRAM
RW Mann, J Wang, S Nalam, S Khanna, G Braceras, H Pilo, BH Calhoun
Solid-State Electronics 54 (11), 1398-1407, 2010
752010
A 23.6-Mb/mm SRAM in 10-nm FinFET Technology With Pulsed-pMOS TVC and Stepped-WL for Low-Voltage Applications
Z Guo, D Kim, S Nalam, J Wiedemer, X Wang, E Karl
IEEE Journal of Solid-State Circuits 54 (1), 210-216, 2018
632018
17.1 a 0.6 v 1.5 ghz 84mb sram design in 14nm finfet cmos technology
E Karl, Z Guo, JW Conary, JL Miller, YG Ng, S Nalam, D Kim, J Keane, ...
2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015
602015
5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 …
JP Kulkarni, J Keane, KH Koo, S Nalam, Z Guo, E Karl, K Zhang
IEEE Journal of Solid-State Circuits 52 (1), 229-239, 2016
57*2016
A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS technology with capacitive charge-sharing write assist circuitry
E Karl, Z Guo, J Conary, J Miller, YG Ng, S Nalam, D Kim, J Keane, ...
IEEE Journal of Solid-State Circuits 51 (1), 222-229, 2015
532015
5T SRAM with asymmetric sizing for improved read stability
S Nalam, BH Calhoun
IEEE journal of solid-state circuits 46 (10), 2431-2442, 2011
502011
Asymmetric sizing in a 45nm 5T SRAM to improve read stability over 6T
S Nalam, BH Calhoun
2009 IEEE Custom Integrated Circuits Conference, 709-712, 2009
482009
5.6 Mb/mm 1R1W 8T SRAM Arrays Operating Down to 560 mV Utilizing Small-Signal Sensing With Charge Shared Bitline and Asymmetric Sense Amplifier in 14 …
JP Kulkarni, J Keane, KH Koo, S Nalam, Z Guo, E Karl, K Zhang
IEEE Journal of Solid-State Circuits 52 (1), 229-239, 2016
392016
Asymmetric 6T SRAM with two-phase write and split bitline differential sensing for low voltage operation
S Nalam, V Chandra, C Pietrzyk, RC Aitken, BH Calhoun
2010 11th International Symposium on Quality Electronic Design (ISQED), 139-146, 2010
262010
Limits of bias based assist methods in nano-scale 6T SRAM
RW Mann, S Nalam, J Wang, BH Calhoun
2010 11th International Symposium on Quality Electronic Design (ISQED), 1-8, 2010
252010
Improving SRAM Vmin and yield by using variation-aware BTI stress
J Wang, S Nalam, Z Qi, RW Mann, M Stan, BH Calhoun
IEEE Custom Integrated Circuits Conference 2010, 1-4, 2010
222010
Virtual prototyper (ViPro) an early design space exploration and optimization tool for SRAM designers
S Nalam, M Bhargava, K Mai, BH Calhoun
Proceedings of the 47th Design Automation Conference, 138-143, 2010
172010
Dynamic write limited minimum operating voltage for nanoscale SRAMs
S Nalam, V Chandra, RC Aitken, BH Calhoun
2011 Design, Automation & Test in Europe, 1-6, 2011
162011
A Technology-Agnostic Simulation Environment (TASE) for iterative custom IC design across processes
S Nalam, M Bhargava, K Ringgenberg, K Mai, BH Calhoun
2009 IEEE International Conference on Computer Design, 523-528, 2009
132009
Memory with improved read stability
V Chandra, SV Nalam, C Pietrzyk, RC Aitken
US Patent 8,339,876, 2012
122012
Benton H
RW Mann, J Wanga, S Nalam, S Khanna, G Braceras, H Pilo
Calhoun a “Impact of circuit assist methods on margin and performance in 6T …, 2010
52010
Sub-550mV SRAM design in 22nm FinFET low power (22FFL) technology with self-induced collapse write assist
D Kim, J Wiedemer, P Kolar, A Shrivastava, J Shah, S Nalam, G Baek, ...
2018 IEEE Symposium on VLSI Technology, 151-152, 2018
32018
Circuit and CAD Solutions for Optional SRAM Design in Nanoscale CMOS
SV Nalam
University of Virginia, 2011
12011
Pipelined Non-strobed Sensing Scheme for Lowering BL Swing in Nano-scale Memories
S Khanna, SV Nalam, BH Calhoun
2014 27th International Conference on VLSI Design and 2014 13th …, 2014
2014
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