Emanuel Tutuc

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Coauteurs

Babak FallahazadSoC Device Engineer, IntelAdresse e-mail validée de intel.com
Seyoung KimPOSTECH, South KoreaAdresse e-mail validée de postech.ac.kr
Junghyo NahProfessor, Dept. of Electrical Engineering, Chungnam National UniversityAdresse e-mail validée de cnu.ac.kr
Kyounghwan KimAppleAdresse e-mail validée de utexas.edu
Luigi ColomboUT DallasAdresse e-mail validée de utdallas.edu
Stefano LarentisFA Engineer @ NXP SemiconductorsAdresse e-mail validée de utexas.edu
T.TaniguchiNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
A.H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoAdresse e-mail validée de physics.utexas.edu
Leonard F. RegisterProfessor of Electrical and Computer EngineeringAdresse e-mail validée de austin.utexas.edu
Kayoung LeeKAISTAdresse e-mail validée de kaist.ac.kr
Rodney RuoffThe IBS CMCM, Dept of Chemistry, School of Energy and ChEng, School of MS&EAdresse e-mail validée de unist.ac.kr
Davood ShahrjerdiNew York UniversityAdresse e-mail validée de nyu.edu
David C DillenUniversity of Texas at AustinAdresse e-mail validée de utexas.edu
Amritesh RaiMicron Technology, Inc.Adresse e-mail validée de utexas.edu
Sangwoo KangTexas Instruments Inc.Adresse e-mail validée de ti.com
Y.P. ShkolnikovExponent, IncAdresse e-mail validée de alumni.princeton.edu
Sorin MelinteProfessor, ICTEAM, EPL, Université catholique de LouvainAdresse e-mail validée de uclouvain.be
G William BurgPhD Student, University of Texas at AustinAdresse e-mail validée de utexas.edu
Supratik GuhaUniversity of Chicago and Argonne National LaboratoryAdresse e-mail validée de uchicago.edu
En-Shao LiuUniversity of Texas at AustinAdresse e-mail validée de mail.utexas.edu

Emanuel Tutuc

Professor, The University of Texas at Austin

Adresse e-mail validée de mer.utexas.edu - Page d'accueil

semiconductor physics condensed matter physics solid state devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Large-area synthesis of high-quality and uniform graphene films on copper foils X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ... science 324 (5932), 1312-1314, 2009	11196	2009
Realization of a high mobility dual-gated graphene field-effect transistor with dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 062107, 2009	1101	2009
The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013	957	2013
Field-effect transistors and intrinsic mobility in ultra-thin MoSe₂ layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 223104, 2012	453	2012
Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances C Wu, N Arju, G Kelp, JA Fan, J Dominguez, E Gonzales, E Tutuc, I Brener, ... Nature communications 5 (1), 1-9, 2014	365	2014
Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing E Tutuc, M Shayegan, DA Huse Physical review letters 93 (3), 036802, 2004	341	2004
Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019	334	2019
Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald IEEE Electron Device Letters 30 (2), 158-160, 2008	254	2008
van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016	253	2016
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017	251	2017
Coulomb drag of massless fermions in graphene S Kim, I Jo, J Nah, Z Yao, SK Banerjee, E Tutuc Physical Review B 83 (16), 161401, 2011	197	2011
Resistance spikes at transitions between quantum Hall ferromagnets EP De Poortere, E Tutuc, SJ Papadakis, M Shayegan Science 290 (5496), 1546-1549, 2000	188	2000
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	173	2015
Anomalous Rashba spin splitting in two-dimensional hole systems R Winkler, H Noh, E Tutuc, M Shayegan Physical Review B 65 (15), 155303, 2002	148	2002
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS₂ CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015	143	2015
Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015	140	2015
Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field YP Shkolnikov, EP De Poortere, E Tutuc, M Shayegan Physical review letters 89 (22), 226805, 2002	139	2002
Hubbard model physics in transition metal dichalcogenide moiré bands F Wu, T Lovorn, E Tutuc, AH MacDonald Physical review letters 121 (2), 026402, 2018	134	2018
In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems E Tutuc, EP De Poortere, SJ Papadakis, M Shayegan Physical review letters 86 (13), 2858, 2001	134	2001
Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with gate dielectric D Shahrjerdi, E Tutuc, SK Banerjee Applied Physics Letters 91 (6), 063501, 2007	132	2007

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