Emanuel Tutuc

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Mansour ShayeganProfessor of Electrical Engineering, Princeton UniversityAdresse e-mail validée de princeton.edu
Babak FallahazadIntel CorporationAdresse e-mail validée de intel.com
Kyounghwan KimAppleAdresse e-mail validée de utexas.edu
Seyoung KimPOSTECH, South KoreaAdresse e-mail validée de postech.ac.kr
Junghyo NahProfessor, Dept. of Electrical Engineering, Chungnam National UniversityAdresse e-mail validée de cnu.ac.kr
Kenji WatanabeNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Luigi ColomboUniversity of Texas at DallasAdresse e-mail validée de utdallas.edu
Hema C. P. MovvaIntel CorporationAdresse e-mail validée de intel.com
Allan H. MacDonaldUniversity of Texas Austin, Indiana University, NRC Canada, U of TorontoAdresse e-mail validée de physics.utexas.edu
Stefano LarentisFA Engineer @ NXP SemiconductorsAdresse e-mail validée de utexas.edu
T.TaniguchiNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Leonard F. RegisterProfessor of Electrical and Computer EngineeringAdresse e-mail validée de austin.utexas.edu
Christopher M CorbetUniversity of Texas at AustinAdresse e-mail validée de fenwick.com
Kayoung LeeKAISTAdresse e-mail validée de kaist.ac.kr
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Adresse e-mail validée de unist.ac.kr
Davood ShahrjerdiNew York UniversityAdresse e-mail validée de nyu.edu
Amritesh RaiFront End Process Integration Engineer @ Intel ▪ UT Austin ▪ Ohio StateAdresse e-mail validée de utexas.edu
Sangwoo KangIntel CorporationAdresse e-mail validée de intel.com
G William BurgAppleAdresse e-mail validée de utexas.edu
David C DillenUniversity of Texas at AustinAdresse e-mail validée de utexas.edu

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Emanuel Tutuc

Professor, The University of Texas at Austin

Adresse e-mail validée de mer.utexas.edu - Page d'accueil

semiconductor physics condensed matter physics solid state devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Large-area synthesis of high-quality and uniform graphene films on copper foils X Li, W Cai, J An, S Kim, J Nah, D Yang, R Piner, A Velamakanni, I Jung, ... science 324 (5932), 1312-1314, 2009	12462	2009
Realization of a high mobility dual-gated graphene field-effect transistor with dielectric S Kim, J Nah, I Jo, D Shahrjerdi, L Colombo, Z Yao, E Tutuc, SK Banerjee Applied Physics Letters 94 (6), 062107, 2009	1210	2009
The role of surface oxygen in the growth of large single-crystal graphene on copper Y Hao, MS Bharathi, L Wang, Y Liu, H Chen, S Nie, X Wang, H Chou, ... Science 342 (6159), 720-723, 2013	1118	2013
Evidence for moiré excitons in van der Waals heterostructures K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ... Nature 567 (7746), 71-75, 2019	682	2019
Field-effect transistors and intrinsic mobility in ultra-thin MoSe₂ layers S Larentis, B Fallahazad, E Tutuc Applied Physics Letters 101 (22), 223104, 2012	533	2012
Spectrally selective chiral silicon metasurfaces based on infrared Fano resonances C Wu, N Arju, G Kelp, JA Fan, J Dominguez, E Gonzales, E Tutuc, I Brener, ... Nature communications 5 (1), 1-9, 2014	428	2014
van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016	411	2016
Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing E Tutuc, M Shayegan, DA Huse Physical review letters 93 (3), 036802, 2004	371	2004
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ... Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017	369	2017
Hubbard model physics in transition metal dichalcogenide moiré bands F Wu, T Lovorn, E Tutuc, AH MacDonald Physical review letters 121 (2), 026402, 2018	287	2018
Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device SK Banerjee, LF Register, E Tutuc, D Reddy, AH MacDonald IEEE Electron Device Letters 30 (2), 158-160, 2008	277	2008
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	224	2015
Topological insulators in twisted transition metal dichalcogenide homobilayers F Wu, T Lovorn, E Tutuc, I Martin, AH MacDonald Physical review letters 122 (8), 086402, 2019	220	2019
Coulomb drag of massless fermions in graphene S Kim, I Jo, J Nah, Z Yao, SK Banerjee, E Tutuc Physical Review B 83 (16), 161401, 2011	211	2011
Resistance spikes at transitions between quantum Hall ferromagnets EP De Poortere, E Tutuc, SJ Papadakis, M Shayegan Science 290 (5496), 1546-1549, 2000	202	2000
Structural and Electrical Properties of MoTe₂ and MoSe₂ Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016	174	2016
Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015	174	2015
Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS₂ CM Corbet, C McClellan, A Rai, SS Sonde, E Tutuc, SK Banerjee Acs Nano 9 (1), 363-370, 2015	171	2015
Correlated insulating states in twisted double bilayer graphene GW Burg, J Zhu, T Taniguchi, K Watanabe, AH MacDonald, E Tutuc Physical review letters 123 (19), 197702, 2019	167	2019
Topologically protected helical states in minimally twisted bilayer graphene S Huang, K Kim, DK Efimkin, T Lovorn, T Taniguchi, K Watanabe, ... Physical review letters 121 (3), 037702, 2018	167	2018

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