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Mattia Musolino
Mattia Musolino
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A physical model for the reverse leakage current in (In, Ga) N/GaN light-emitting diodes based on nanowires
M Musolino, D Van Treeck, A Tahraoui, L Scarparo, C De Santi, ...
Journal of Applied Physics 119 (4), 2016
452016
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the material quality of bulk GaN
JK Zettler, C Hauswald, P Corfdir, M Musolino, L Geelhaar, H Riechert, ...
Crystal Growth & Design 15 (8), 4104-4109, 2015
402015
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes
M Musolino, A Tahraoui, S Fernández-Garrido, O Brandt, A Trampert, ...
Nanotechnology 26 (8), 085605, 2015
392015
Paving the way toward the world's first 200mm SiC pilot line
M Musolino, X Xu, H Wang, V Rengarajan, I Zwieback, G Ruland, ...
Materials Science in Semiconductor Processing 135, 106088, 2021
232021
Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In, Ga) N/GaN nanowires
M Musolino, A Tahraoui, F Limbach, J Lähnemann, U Jahn, O Brandt, ...
Applied Physics Letters 105 (8), 2014
222014
Electroluminescence and current–voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble
HRLG David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann ...
Beilstein J. Nanotechnol. 10, 1177-1187, 2019
92019
Pixel design driven performance improvement in 4T CMOS image sensors: Dark current reduction and full-well enhancement
AM Brunetti, M Musolino, S Strangio, B Choubey
IEEE Transactions on Electron Devices 67 (1), 409-412, 2019
62019
Effect of varying three-dimensional strain on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
M Musolino, A Tahraoui, L Geelhaar, F Sacconi, F Panetta, C De Santi, ...
Physical Review Applied 7, 044014, 2017
52017
A modified Shockley equation taking into account the multi-element nature of light emitting diodes based on nanowire ensembles
M Musolino, A Tahraoui, D van Treeck, L Geelhaar, H Riechert
Nanotechnology 27 (27), 275203, 2016
52016
Staggered pixel layout to reduce area and increase full well capacity in CMOS image sensors
AM Brunetti, M Musolino, B Choubey
IEEE Transactions on Electron Devices 68 (2), 572-577, 2021
32021
Growth, fabrication, and investigation of light-emitting diodes based on GaN nanowires
M Musolino
Humboldt-Universität zu Berlin, 2016
32016
The hydride vapor phase epitaxy of GaN on silicon covered by nanostructures
U Jahn, M Musolino, J Lähnemann, P Dogan, SF Garrido, JF Wang, K Xu, ...
Semiconductor Science and Technology 31 (6), 065018, 2016
32016
Deep level transient spectroscopy on light-emitting diodes based on (In, Ga) N/GaN nanowire ensembles
M Musolino, M Meneghini, L Scarparo, C De Santi, A Tahraoui, ...
Gallium Nitride Materials and Devices X 9363, 273-280, 2015
32015
Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices
M Musolino, E Carria, D Crippa, S Preti, M Azadmand, M Mauceri, ...
Microelectronic Engineering 274, 111976, 2023
22023
Multiscale approach for the study of optoelectronic properties of InGaN/GaN nanowire light-emitting diodes
F Sacconi, F Panetta, MA der Maur, A Di Carlo, A Pecchia, M Musolino, ...
2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), 1551-1554, 2015
22015
Thermal transient testing alternatives for the characterisation of GaN HEMT power devices
Z Sarkany, M Musolino, A Sitta, M Calabretta, M Nemeth, G Farkas, ...
2022 28th International Workshop on Thermal Investigations of ICs and …, 2022
12022
The effect of the three-dimensional strain variation on the emission properties of LEDs based on (In, Ga) N/GaN nanowires
M Musolino, F Sacconi, C De Santi, F Panetta, A Tahraoui, M Meneghini, ...
Proceedings of the 12th International Conference on Nitride Semiconductors …, 2017
2017
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