Martin Stutzmann

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	总计	2019 年至今
引用	45241	8821
h 指数	97	38
i10 指数	513	187

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Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität Freiburg在 inatech.uni-freiburg.de 的电子邮件经过验证
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität München在 wsi.tum.de 的电子邮件经过验证
Martin EickhoffInstitut für Festkörperphysik, Universität Bremen在 ifp.uni-bremen.de 的电子邮件经过验证
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREA在 icn2.cat 的电子邮件经过验证
Roman DimitrovFinisar在 finisar.com 的电子邮件经过验证
Ian D. SharpWalter Schottky Institut and Physik Department, Technische Universität München在 wsi.tum.de 的电子邮件经过验证
Hartmut WiggersUniversity of Duisburg-Essen在 uni-due.de 的电子邮件经过验证
James R. ShealyCornell University在 ece.cornell.edu 的电子邮件经过验证
Josef Gerhard MüllerMunich University of Applied Sciences在 hm.edu 的电子邮件经过验证
WARREN B JACKSONPrincipal Scientist在 parc.com 的电子邮件经过验证
Carlos F. O. Graeff FRSC (ORCID:000...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESP在 unesp.br 的电子邮件经过验证
Nils WeimannUniversity of Duisburg-Essen在 uni-due.de 的电子邮件经过验证
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der Wissenschaften在 wmi.badw.de 的电子邮件经过验证
David BiegelsenXerox Palo Alto Research Center在 parc.com 的电子邮件经过验证
Martin AlbrechtLeibniz-Institut für Kristallzüchtung在 ikz-berlin.de 的电子邮件经过验证
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff University在 cardiff.ac.uk 的电子邮件经过验证
Manuel CardonaMax Planck Institut在 fkf.mpg.de 的电子邮件经过验证
Felix HoehneWalter-Schottky Institut, TU München在 wsi.tum.de 的电子邮件经过验证
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre Dame在 itk.ppke.hu 的电子邮件经过验证
Gema Martínez CriadoEuropean Synchrotron Radiation Facility在 esrf.fr 的电子邮件经过验证

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Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

在 tum.de 的电子邮件经过验证 - 首页

Semiconductor Physics


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3724	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2126	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1569	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1405	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1121*	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	796	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	734	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	646	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	582	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	446	1989
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	423	1997
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	419	1999
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B—Condensed Matter and Materials Physics 83 (8), 081304, 2011	407	2011
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	386	1996
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	366	2003
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	366	1987
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	365	1998
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	321	1990
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	301	1997
Electronic and optical properties of boron-doped nanocrystalline diamond films W Gajewski, P Achatz, OA Williams, K Haenen, E Bustarret, M Stutzmann, ... Physical Review B—Condensed Matter and Materials Physics 79 (4), 045206, 2009	296	2009

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