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Samik Mukherjee
Samik Mukherjee
Assistant Professor at the Jio Institute, Navi Mumbai, India
Verified email at jioinstitute.edu.in
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Cited by
Cited by
Year
Synthesis of antimonene on germanium
M Fortin-Deschênes, O Waller, TO Mentes, A Locatelli, S Mukherjee, ...
Nano letters 17 (8), 4970-4975, 2017
2042017
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
S Assali, J Nicolas, S Mukherjee, A Dijkstra, O Moutanabbir
Applied Physics Letters 112 (25), 2018
882018
An electrically excited nanoscale light source with active angular control of the emitted light
E Le Moal, S Marguet, B Rogez, S Mukherjee, P Dos Santos, ...
Nano letters 13 (9), 4198-4205, 2013
872013
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
JH Fournier-Lupien, S Mukherjee, S Wirths, E Pippel, N Hayazawa, ...
Applied physics letters 103 (26), 2013
812013
Phonon engineering in isotopically disordered silicon nanowires
S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M Mata, J Arbiol, ...
Nano Letters 15 (6), 3885, 2015
482015
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
J Nicolas, S Assali, S Mukherjee, A Lotnyk, O Moutanabbir
Crystal Growth & Design 20 (5), 3493-3498, 2020
392020
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering
T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...
Physical Review Applied 13 (4), 044062, 2020
352020
Short-range atomic ordering in non-equilibrium silicon-germanium-tin semiconductors
S Mukherjee, N Kodali, D Isheim, S Wirths, JM Hartmann, D Buca, ...
Physical Review B (Rapid Communication) 95, 161402, 2017
292017
Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
J Rathore, A Nanwani, S Mukherjee, S Das, O Moutanabbir, S Mahapatra
Journal of Physics D: Applied Physics 54 (18), 185105, 2021
232021
Highly tensile-strained Ge/InAlAs nanocomposites
D Jung, J Faucher, S Mukherjee, A Akey, DJ Ironside, M Cabral, X Sang, ...
Nature communications 8 (1), 14204, 2017
232017
Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions
S Mukherjee, H Watanabe, D Isheim, DN Seidman, O Moutanabbir
Nano letters 16 (2), 1335-1344, 2016
232016
Growth and luminescence of polytypic InP on epitaxial graphene
S Mukherjee, N Nateghi, RM Jacobberger, E Bouthillier, M De La Mata, ...
Advanced Functional Materials 28 (8), 1705592, 2018
192018
Reduction of thermal conductivity in nanowires by combined engineering of crystal phase and isotope disorder
S Mukherjee, U Givan, S Senz, M De La Mata, J Arbiol, O Moutanabbir
Nano letters 18 (5), 3066-3075, 2018
172018
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
L Persichetti, M Montanari, C Ciano, L Di Gaspare, M Ortolani, ...
Crystals 10 (3), 179, 2020
142020
Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects
S Mukherjee, S Assali, O Moutanabbir
Nano Letters 21 (23), 9882-9888, 2021
132021
Ge–Ge0. 92Sn0. 08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
S Singh, S Mukherjee, S Mukherjee, S Assali, L Luo, S Das, ...
Applied Physics Letters 120 (17), 2022
102022
3D atomic mapping of interfacial roughness and its spatial correlation length in sub-10 nm superlattices
S Mukherjee, A Attiaoui, M Bauer, O Moutanabbir
ACS applied materials & interfaces 12 (1), 1728-1736, 2019
92019
A Light‐Hole Germanium Quantum Well on Silicon
S Assali, A Attiaoui, PD Vecchio, S Mukherjee, J Nicolas, O Moutanabbir
Advanced Materials 34 (27), 2201192, 2022
82022
Group IV nanowires for carbon-free energy conversion
S Mukherjee, S Assali, O Moutanabbir
Semiconductors and Semimetals 98, 151-229, 2018
62018
Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature Atomic Layer Deposition for Self-Powered Photodetectors
J Yang, J Li, A Bahrami, N Nasiri, S Lehmann, MO Cichocka, S Mukherjee, ...
ACS Applied Materials & Interfaces 14 (48), 54034-54043, 2022
32022
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