| Systematic experimental and theoretical investigation of intersubband absorption in Ga N∕ Al N quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, E Warde, F Guillot, ... Physical Review B 73 (12), 125347, 2006 | 307 | 2006 |
| GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance PK Kandaswamy, F Guillot, E Bellet-Amalric, E Monroy, L Nevou, ... Journal of Applied Physics 104 (9), 2008 | 231 | 2008 |
| Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ... Applied Physics Letters 92 (1), 2008 | 156 | 2008 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 115 | 2009 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 115 | 2009 |
| Si-doped GaN∕ AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths F Guillot, E Bellet-Amalric, E Monroy, M Tchernycheva, L Nevou, ... Journal of applied physics 100 (4), 2006 | 108 | 2006 |
| Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ... Applied physics letters 88 (14), 2006 | 94 | 2006 |
| High-quality AlN∕ GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors D Hofstetter, E Baumann, FR Giorgetta, M Graf, M Maier, F Guillot, ... Applied physics letters 88 (12), 2006 | 86 | 2006 |
| High-quality AlN∕ GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors D Hofstetter, E Baumann, FR Giorgetta, M Graf, M Maier, F Guillot, ... Applied physics letters 88 (12), 2006 | 86 | 2006 |
| Short wavelength (λ= 2.13 μm) intersubband luminescence from GaN∕ AlN quantum wells at room temperature L Nevou, M Tchernycheva, FH Julien, F Guillot, E Monroy Applied physics letters 90 (12), 2007 | 76 | 2007 |
| Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕ AlN coupled quantum wells L Nevou, N Kheirodin, M Tchernycheva, L Meignien, P Crozat, A Lupu, ... Applied physics letters 90 (22), 2007 | 73 | 2007 |
| High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈ 1.55 μm A Vardi, N Kheirodin, L Nevou, H Machhadani, L Vivien, P Crozat, ... Applied Physics Letters 93 (19), 2008 | 70 | 2008 |
| Electron confinement in strongly coupled GaN∕ AlN quantum wells M Tchernycheva, L Nevou, L Doyennette, FH Julien, F Guillot, E Monroy, ... Applied physics letters 88 (15), 2006 | 66 | 2006 |
| GaN-based quantum dot infrared photodetector operating at 1.38 µm L Doyennette, L Nevou, M Tchernycheva, A Lupu, F Guillot, E Monroy, ... Electronics Letters 41 (19), 1, 2005 | 60 | 2005 |
| Electrically adjustable intersubband absorption of a GaN∕ AlN superlattice grown on a transistorlike structure E Baumann, FR Giorgetta, D Hofstetter, S Leconte, F Guillot, ... Applied physics letters 89 (10), 2006 | 57 | 2006 |
| Optically nonlinear effects in intersubband transitions of GaN∕ AlN-based superlattice structures D Hofstetter, E Baumann, FR Giorgetta, F Guillot, S Leconte, E Monroy Applied Physics Letters 91 (13), 2007 | 51 | 2007 |
| Intraband absorption of doped GaN∕ AlN quantum dots at telecommunication wavelengths M Tchernycheva, L Nevou, L Doyennette, A Helman, R Colombelli, ... Applied Physics Letters 87 (10), 2005 | 51 | 2005 |
| Electrooptical modulator at telecommunication wavelengths based on GaN–AlN coupled quantum wells N Kheirodin, L Nevou, H Machhadani, P Crozat, L Vivien, ... IEEE Photonics Technology Letters 20 (9), 724-726, 2008 | 47 | 2008 |
| Intersubband resonant enhancement of second-harmonic generation in GaN∕ AlN quantum wells L Nevou, M Tchernycheva, F Julien, M Raybaut, A Godard, E Rosencher, ... Applied physics letters 89 (15), 2006 | 47 | 2006 |
| High frequency (f¼2. 37 GHz) room temperature operation of 1.55lm AlN/GaN-based intersubband detector FR Giorgetta, E Baumann, F Guillot, E Monroy, D Hofstetter simulation 104, 103, 2007 | 46 | 2007 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, FranceAdresse e-mail validée de cea.fr
