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Zoubir Khatir
Zoubir Khatir
Directeur de recherche, Univ. Eiffel
Verified email at univ-eiffel.fr
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Cited by
Cited by
Year
Ageing and failure modes of IGBT modules in high-temperature power cycling
V Smet, F Forest, JJ Huselstein, F Richardeau, Z Khatir, S Lefebvre, ...
IEEE transactions on industrial electronics 58 (10), 4931-4941, 2011
6552011
Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review
Y Avenas, L Dupont, Z Khatir
IEEE transactions on power electronics 27 (6), 3081-3092, 2011
5632011
A review on DC/DC converter architectures for power fuel cell applications
A Kolli, A Gaillard, A De Bernardinis, O Bethoux, D Hissel, Z Khatir
Energy Conversion and Management 105, 716-730, 2015
2312015
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling
L Dupont, Z Khatir, S Lefebvre, S Bontemps
Microelectronics Reliability 46 (9-11), 1766-1771, 2006
1432006
Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions
M Bouarroudj, Z Khatir, JP Ousten, F Badel, L Dupont, S Lefebvre
Microelectronics Reliability 47 (9-11), 1719-1724, 2007
1102007
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions
S Lefebvre, Z Khatir, F Saint-Eve
IEEE Transactions on Electron Devices 52 (2), 276-283, 2005
1092005
Regenerative braking modeling, control, and simulation of a hybrid energy storage system for an electric vehicle in extreme conditions
K Itani, A De Bernardinis, Z Khatir, A Jammal, M Oueidat
IEEE Transactions on Transportation Electrification 2 (4), 465-479, 2016
1002016
Comparative analysis of two hybrid energy storage systems used in a two front wheel driven electric vehicle during extreme start-up and regenerative braking operations
K Itani, A De Bernardinis, Z Khatir, A Jammal
Energy Conversion and Management 144, 69-87, 2017
932017
Robustness of 1.2 kV SiC MOSFET devices
D Othman, S Lefebvre, M Berkani, Z Khatir, A Ibrahim, A Bouzourene
Microelectronics Reliability 53 (9-11), 1735-1738, 2013
792013
Comparison between two braking control methods integrating energy recovery for a two-wheel front driven electric vehicle
K Itani, A De Bernardinis, Z Khatir, A Jammal
Energy Conversion and Management 122, 330-343, 2016
782016
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions
A Ibrahim, JP Ousten, R Lallemand, Z Khatir
Microelectronics Reliability 58, 204-210, 2016
692016
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions
S Carubelli, Z Khatir
Microelectronics journal 34 (12), 1143-1151, 2003
662003
Robustness of SiC JFET in short-circuit modes
N Boughrara, S Moumen, S Lefebvre, Z Khatir, P Friedrichs, JC Faugieres
IEEE Electron device letters 30 (1), 51-53, 2008
632008
Investigations on junction temperature estimation based on junction voltage measurements
Z Khatir, L Dupont, A Ibrahim
Microelectronics Reliability 50 (9-11), 1506-1510, 2010
592010
Comparison study on performances and robustness between SiC MOSFET & JFET devices–Abilities for aeronautics application
D Othman, M Berkani, S Lefebvre, A Ibrahim, Z Khatir, A Bouzourene
Microelectronics Reliability 52 (9-10), 1859-1864, 2012
582012
Experimental investigations of trench field stop IGBT under repetitive short-circuits operations
M Arab, S Lefebvre, Z Khatir, S Bontemps
2008 IEEE Power Electronics Specialists Conference, 4355-4360, 2008
572008
Stress-based model for lifetime estimation of bond wire contacts using power cycling tests and finite-element modeling
N Dornic, Z Khatir, SH Tran, A Ibrahim, R Lallemand, JP Ousten, ...
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
562019
Real-time computation of thermal constraints in multichip power electronic devices
Z Khatir, S Carubelli, F Lecoq
IEEE Transactions on Components and Packaging Technologies 27 (2), 337-344, 2004
552004
Temperature-level effect on solder lifetime during thermal cycling of power modules
M Bouarroudj, Z Khatir, JP Ousten, S Lefebvre
IEEE Transactions on device and materials reliability 8 (3), 471-477, 2008
502008
Boundary element analysis of thermal fatigue effects on high power IGBT modules
Z Khatir, S Lefebvre
Microelectronics Reliability 44 (6), 929-938, 2004
462004
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