| Time resolved and temperature dependence of the radiative properties of thiol-capped CdS nanoparticles films N Bel Haj Mohamed, M Haouari, Z Zaaboub, M Nafoutti, F Hassen, ... Journal of nanoparticle research 16, 1-17, 2014 | 46 | 2014 |
| Optical properties of self-assembled InAs quantum islands grown on InP (001) vicinal substrates B Salem, J Olivares, G Guillot, G Bremond, J Brault, C Monat, M Gendry, ... Applied Physics Letters 79 (26), 4435-4437, 2001 | 46 | 2001 |
| Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution L Beji, L Sfaxi, B Ismail, S Zghal, F Hassen, H Maaref Microelectronics journal 34 (10), 969-974, 2003 | 44 | 2003 |
| Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices B Ilahi, L Sfaxi, F Hassen, L Bouzaiene, H Maaref, B Salem, G Bremond, ... physica status solidi (a) 199 (3), 457-463, 2003 | 32 | 2003 |
| Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots B Ilahi, L Sfaxi, F Hassen, B Salem, G Bremond, O Marty, L Bouzaiene, ... Materials Science and Engineering: C 26 (2-3), 374-377, 2006 | 30 | 2006 |
| Effect of surface on the optical structure and thermal properties of organically capped CdS nanoparticles NBH Mohamed, M Haouari, Z Zaaboub, F Hassen, H Maaref, HB Ouada Journal of Physics and Chemistry of Solids 75 (8), 936-944, 2014 | 29 | 2014 |
| Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD F Saidi, F Hassen, H Maaref, L Auvray, H Dumont, Y Monteil Materials Science and Engineering: C 21 (1-2), 245-249, 2002 | 26 | 2002 |
| Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission L Bouzaiene, B Ilahi, L Sfaxi, F Hassen, H Maaref, O Marty, J Dazord Applied Physics A 79, 587-591, 2004 | 25 | 2004 |
| Radiative recombination lifetime of excitons in self-organized InAs/GaAs quantum dots A Melliti, MA Maaref, F Hassen, M Hjiri, H Maaref, J Tignon, B Sermage Solid state communications 128 (6-7), 213-217, 2003 | 25 | 2003 |
| Comprehensive investigation of optical and electronic properties of tunable InAs QDs optically active at O-band telecommunication window with (In) GaAs surrounding material O Nasr, MHH Alouane, H Maaref, F Hassen, L Sfaxi, B Ilahi Journal of luminescence 148, 243-248, 2014 | 24 | 2014 |
| Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures H Dumont, L Auvray, Y Monteil, F Saidi, F Hassen, H Maaref Optical Materials 24 (1-2), 303-308, 2003 | 22 | 2003 |
| Critical layer thickness enhancement of InAs overgrowth on porous GaAs L Beji, B Ismaıl, L Sfaxi, F Hassen, H Maaref, HB Ouada Journal of crystal growth 258 (1-2), 84-88, 2003 | 21 | 2003 |
| Optical study of BxGa1− xAs/GaAs epilayers F Saidi, F Hassen, H Maaref, H Dumont, Y Monteil Materials Science and Engineering: C 26 (2-3), 236-239, 2006 | 20 | 2006 |
| Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ... Materials Science and Engineering: B 262, 114769, 2020 | 19 | 2020 |
| Visible photoluminescence in porous GaAs capped by GaAs L Beji, L Sfaxi, B Ismail, A Missaoui, F Hassen, H Maaref, HB Ouada Physica E: Low-dimensional Systems and Nanostructures 25 (4), 636-642, 2005 | 17 | 2005 |
| Morphological and optical characterization of porous silicon carbide F Hassen, R M'Ghaieth, H Maaref, R Madar Materials Science and Engineering: C 15 (1-2), 113-115, 2001 | 17 | 2001 |
| Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer B Ilahi, L Sfaxi, F Hassen, H Maaref, B Salem, G Guillot, A Jbeli, X Marie Applied Physics A 81, 813-816, 2005 | 16 | 2005 |
| Temperature and excitation dependence of the luminescence spectra of InAs quantum dots M Hjiri, F Hassen, H Maaref Materials Science and Engineering: B 88 (2-3), 255-258, 2002 | 14 | 2002 |
| Exciton luminescence in Ge–Ge1−xSix multiple‐quantum‐well structures LK Orlov, VY Aleshkin, NG Kalugin, NA Bekin, OA Kuznetsov, B Dietrich, ... Journal of applied physics 80 (1), 415-422, 1996 | 14 | 1996 |
| Luminescence polarization and hole spin-relaxation in quantum wells J Barrau, G Bacquet, F Hassen, N Lauret, T Amand, M Brousseau Superlattices and microstructures 14 (1), 27, 1993 | 14 | 1993 |
David J DunstanProfessor of Experimental Physics, Queen Mary University of LondonAdresse e-mail validée de qmul.ac.uk
