HoKwon Kim

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Manish ChhowallaUniversity of CambridgeAdresse e-mail validée de cam.ac.uk
Cecilia MatteviProfessor of Materials Science, Imperial College LondonAdresse e-mail validée de imperial.ac.uk
Andras KisProfessor of Electrical Engineering, EPFLAdresse e-mail validée de epfl.ch
Goki EdaNational University of SingaporeAdresse e-mail validée de nus.edu.sg
Hisato YamaguchiLos Alamos National LaboratoryAdresse e-mail validée de lanl.gov
Eduardo SaizImperial College LondonAdresse e-mail validée de imperial.ac.uk
Dmitry OvchinnikovUniversity of Kansas, PhysicsAdresse e-mail validée de ku.edu
Dmitrii UnuchekEPFLAdresse e-mail validée de epfl.ch
Luca ArtigliaPaul Scherrer InstitutAdresse e-mail validée de psi.ch
Cyrus F. HirjibehedinMIT Lincoln LaboratoryAdresse e-mail validée de ll.mit.edu
Reyes CalvoUniversidad de Alicante- Department of Applied Physics-IUMAAdresse e-mail validée de ua.es
john lowengrubUC IrvineAdresse e-mail validée de math.uci.edu
Vivek ShenoyEduardo D. Glandt President’s Distinguished Professor, University of PennsylvaniaAdresse e-mail validée de seas.upenn.edu
Esteban MecaPostdoctoral Researcher, University of CórdobaAdresse e-mail validée de uco.es
Denis MariolleCEA-LETI, Minatec CampusAdresse e-mail validée de cea.fr
Anastasia TyurninaBrunel University of LondonAdresse e-mail validée de brunel.ac.uk
Nicolas ChevalierUniv. Grenoble Alpes, CEA, LETIAdresse e-mail validée de cea.fr
Thomas AnthopoulosProfessor of Emerging Optoelectronics, The University of Manchester (UK)Adresse e-mail validée de manchester.ac.uk
K. Andre MkhoyanProfessor, Chemical Engineering and Materials Science, University of MinnesotaAdresse e-mail validée de umn.edu
Agnieszka KucHelmholtz-Zentrum Dresden-Rossendorf | Center for Advanced Systems Understanding (CASUS)Adresse e-mail validée de hzdr.de

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HoKwon Kim

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2D materials thin films nanoscale devices nanoelectronics


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
A review of chemical vapour deposition of graphene on copper C Mattevi, H Kim, M Chhowalla Journal of Materials Chemistry 21 (10), 3324-3334, 2011	1965	2011
Insulator to semimetal transition in graphene oxide G Eda, C Mattevi, H Yamaguchi, HK Kim, M Chhowalla The Journal of Physical Chemistry C 113 (35), 15768-15771, 2009	736	2009
Activation energy paths for graphene nucleation and growth on Cu HK Kim, C Mattevi, MR Calvo, JC Oberg, L Artiglia, S Agnoli, ... ACS nano 6 (4), 3614-3623, 2012	491	2012
Production and processing of graphene and related materials C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ... 2D Materials 7 (2), 022001, 2020	393	2020
Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films H Yamaguchi, G Eda, C Mattevi, HK Kim, M Chhowalla ACS nano 4 (1), 524-528, 2010	258	2010
Suppressing nucleation in metalorganic chemical vapor deposition of MoS2 monolayers by alkali metal halides HK Kim, D Ovchinnikov, D Deiana, D Unuchek, A Kis Nano Letters, 2017	227	2017
Epitaxial graphene growth and shape dynamics on copper: phase-field modeling and experiments E Meca, J Lowengrub, H Kim, C Mattevi, VB Shenoy Nano letters 13 (11), 5692-5697, 2013	173	2013
Wafer-scale MOCVD growth of monolayer MoS₂ on sapphire and SiO₂ H Cun, M Macha, HK Kim, K Liu, Y Zhao, T LaGrange, A Kis, A Radenovic Nano Research 12, 2646-2652, 2019	127	2019
Modeling of the self-limited growth in catalytic chemical vapor deposition of graphene HK Kim, E Saiz, M Chhowalla, C Mattevi New Journal of Physics 15 (5), 053012, 2013	77	2013
Optoelectronic properties of graphene thin films deposited by a Langmuir–Blodgett assembly HK Kim, C Mattevi, HJ Kim, A Mittal, KA Mkhoyan, RE Riman, ... Nanoscale 5 (24), 12365-12374, 2013	63	2013
Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion MW Chen, HK Kim, D Ovchinnikov, A Kuc, T Heine, O Renault, A Kis npj 2D Materials and Applications 2 (1), 2, 2018	60	2018
Doping efficiency of single and randomly stacked bilayer graphene by iodine adsorption HK Kim, O Renault, A Tyurnina, JP Simonato, D Rouchon, D Mariolle, ... Applied Physics Letters 105 (1), 2014	49	2014
Solution-processable organic dielectrics for graphene electronics C Mattevi, F Colléaux, HK Kim, YH Lin, KT Park, M Chhowalla, ... Nanotechnology 23 (34), 344017, 2012	46	2012
Electronic Properties of Transferable Atomically Thin MoSe₂/h-BN Heterostructures Grown on Rh(111) MW Chen, HK Kim, C Bernard, M Pizzochero, J Zaldı́var, JI Pascual, ... ACS nano 12 (11), 11161-11168, 2018	20	2018
Free-standing electronic character of monolayer MoS2 in van der Waals epitaxy HK Kim, D Dumcenco, M Frégnaux, A Benayad, MW Chen, YC Kung, ... Physical Review B 94, 081401(R), 2016	19	2016
Epitaxial growth in dislocation-free strained asymmetric alloy films RC Desai, HK Kim, A Chatterji, D Ngai, S Chen, N Yang Physical Review B 81 (23), 235301, 2010	17	2010
Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene Y Xiao, HK Kim, C Mattevi, M Chhowalla, RC Maher, LF Cohen Carbon 65, 7-12, 2013	14	2013
Chemistry and electronics of single layer MoS2 domains from photoelectron spectromicroscopy using laboratory excitation sources M Frégnaux, H Kim, D Rouchon, V Derycke, J Bleuse, D Voiry, ... Surface and Interface Analysis, 2016	10	2016
Correlating chemical and electronic states from quantitative photoemission electron microscopy of transition-metal dichalcogenide heterostructures O Renault, H Kim, D Dumcenco, D Unuchek, N Chevalier, M Gay, A Kis, ... Journal of Vacuum Science & Technology A 39 (5), 2021	7	2021
Doping characteristics of iodine on as-grown chemical vapor deposited graphene on Pt HK Kim, O Renault, A Tyurnina, JF Guillet, JP Simonato, D Rouchon, ... Ultramicroscopy, 2015	4	2015

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