Determination of anisotropic up to 60 T in single crystals MM Altarawneh, K Collar, CH Mielke, N Ni, SL Bud’ko, PC Canfield
Physical Review B 78 (22), 220505, 2008
201 2008 Fermi surface of α-uranium at ambient pressure D Graf, R Stillwell, TP Murphy, JH Park, M Kano, EC Palm, P Schlottmann, ...
Physical Review B 80 (24), 241101, 2009
28 2009 Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films. ASBSEB Adam W Wood, Kristen Collar, Jincheng Li
Nanotechnology 27 (11), 115704, 2016
20 2016 GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ...
AIP Advances 5 (6), 2015
18 2015 Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy W Kong, WY Jiao, JC Li, K Collar, TH Kim, JH Leach, AS Brown
Applied Physics Letters 107 (3), 2015
16 2015 Growth of GaAs1− xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics J Li, TH Kim, K Forghani, W Jiao, W Kong, K Collar, TF Kuech, AS Brown
Journal of Applied Physics 116 (4), 2014
15 2014 Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown
AIP Advances 6 (3), 2016
12 2016 Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy K Collar, J Li, W Jiao, Y Guan, M Losurdo, J Humlicek, AS Brown
AIP Advances 7 (7), 2017
10 2017 The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy W Jiao, W Kong, J Li, K Collar, TH Kim, AS Brown
Applied Physics Letters 103 (16), 2013
10 2013 Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates KN Collar, J Li, W Jiao, W Kong, AS Brown
Nanotechnology 29 (3), 035604, 2017
9 2017 Impact of vicinal GaAs (001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1− xBix J Li, K Collar, W Jiao, W Kong, TF Kuech, SE Babcock, A Brown
Applied Physics Letters 108 (23), 2016
6 2016 The characteristics of MBE-grown InxAl1− xN/GaN surface states W Jiao, W Kong, J Li, K Collar, TH Kim, M Losurdo, AS Brown
Applied Physics Letters 109 (8), 2016
5 2016 Structural Characterization of the Nanocolumnar Microstructure of InAlN W Kong, WY Jiao, JC Li, K Collar, JH Leach, J Fournelle, TH Kim, ...
Journal of Electronic Materials 45, 654-660, 2016
5 2016 GaAsBi Synthesis: From Band Structure Modification to Nanostructure Formation KN Collar
Duke University, 2017
2017 The characteristics of MBE-grown In {sub x} Al {sub 1− x} N/GaN surface states W Jiao, W Kong, J Li, TH Kim, AS Brown, K Collar, M Losurdo
Applied Physics Letters 109 (8), 2016
2016 The Relationship Between Terminating Oxide Chemistry and InAs (100) Two-Dimensional Electron Gas (2DEG) Conductivity K Collar, W Jiao, J Li, W Kong, A Brown
APS March Meeting Abstracts 2015, M9. 005, 2015
2015 GaAs Bi y Raman signatures: illuminating relationships between the electrical and optical properties of GaAs Bi y and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ...
Appl. Phys. Lett 112110 (10.1063/1.3695066), 100, 2012
2012 Binary Alloy Solidification at 35 Tesla J Cooley, T Ott, S Tracy, T Tucker, K Collar, S Lillard, J Foley, T Wheeler, ...
Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box …, 2011
2011 Synthesis and Characterization of SN Doped CEIN3 K Collar
2011 Synthesis and Field Skin Depth Studies on Tin Doped CeIn3 K Collar, J Cooley, S Tozer
APS Southeastern Section Meeting Abstracts 77, DA. 001, 2010
2010