Tao Wang
Tao Wang
APTIV
Verified email at rub.de
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almaBTE: A solver of the space–time dependent Boltzmann transport equation for phonons in structured materials
J Carrete, B Vermeersch, A Katre, A van Roekeghem, T Wang, ...
Computer Physics Communications 220, 351-362, 2017
1012017
Crack propagation behaviors at Cu/SiC interface by molecular dynamics simulation
Z Yang, Y Zhou, T Wang, Q Liu, Z Lu
Computational materials science 82, 17-25, 2014
502014
Ab initio phonon scattering by dislocations
T Wang, J Carrete, A van Roekeghem, N Mingo, GKH Madsen
Physical Review B 95 (24), 245304, 2017
392017
Atomistic study of the influence of lattice defects on the thermal conductivity of silicon
T Wang, GKH Madsen, A Hartmaier
Modelling and Simulation in Materials Science and Engineering 22 (3), 035011, 2014
282014
Phonon transport unveils the prevalent point defects in GaN
A Katre, J Carrete, T Wang, GKH Madsen, N Mingo
Physical Review Materials 2 (5), 050602, 2018
182018
Influence of point defects on the thermal conductivity in FeSi
R Stern, T Wang, J Carrete, N Mingo, GKH Madsen
Physical Review B 97 (19), 195201, 2018
142018
Phonon scattering by dislocations in GaN
T Wang, J Carrete, N Mingo, GKH Madsen
ACS applied materials & interfaces 11 (8), 8175-8181, 2019
132019
Comparison of the Green-Kubo and homogeneous non-equilibrium molecular dynamics methods for calculating thermal conductivity
GKHM B Dongre, T Wang
Modelling and Simulation in Materials Science and Engineering, 2017
122017
Large scale Molecular Dynamics simulation of microstructure formation during thermal spraying of pure copper
T Wang, C Begau, G Sutmann, A Hartmaier
Surface and coatings technology 280, 72-80, 2015
62015
Growth, charge and thermal transport of flowered graphene
A Cresti, J Carrete, H Okuno, T Wang, GKH Madsen, N Mingo, P Pochet
Carbon 161, 259-268, 2020
12020
Large-scale molecular dynamics simulation of growth, microstructure and properties of thermal-sprayed coatings
T Wang
Reduction effect on thermal conductivity of Silicon by defect structures investigated from atomistic level
T Wang, G Madsen, A Hartmaier
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