Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Duvaut, C Vannuffel, ...
Applied Physics Letters 76 (16), 2241-2243, 2000
261 2000 From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001) M Gendry, C Monat, J Brault, P Regreny, G Hollinger, B Salem, G Guillot, ...
Journal of applied physics 95 (9), 4761-4766, 2004
111 2004 Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage W Chikhaoui, JM Bluet, MA Poisson, N Sarazin, C Dua, C Bru-Chevallier
Applied Physics Letters 96 (7), 2010
107 2010 Growth and optical properties of GaN/AlN quantum wells C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, JL Rouviere, B Daudin, ...
Applied Physics Letters 82 (23), 4154-4156, 2003
103 2003 How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy B Daudin, G Feuillet, J Hübner, Y Samson, F Widmann, A Philippe, ...
Journal of applied physics 84 (4), 2295-2300, 1998
98 1998 Rapid thermal annealing in L Grenouillet, C Bru-Chevallier, G Guillot, P Gilet, P Ballet, P Duvaut, ...
Journal of applied physics 91 (9), 5902-5908, 2002
86 2002 Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates J Cao, D Pavlidis, A Eisenbach, A Philippe, C Bru-Chevallier, G Guillot
Applied physics letters 71 (26), 3880-3882, 1997
56 1997 Structural properties of undoped and doped cubic GaN grown on SiC (001) E Martínez-Guerrero, E Bellet-Amalric, L Martinet, G Feuillet, B Daudin, ...
Journal of applied physics 91 (8), 4983-4987, 2002
48 2002 Strong carrier confinement and evidence for excited states in self-assembled InAs quantum islands grown on InP (001) B Salem, T Benyattou, G Guillot, C Bru-Chevallier, G Bremond, C Monat, ...
Physical Review B 66 (19), 193305, 2002
46 2002 Excitonic properties of wurtzite InP nanowires grown on silicon substrate MHH Alouane, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 24 (3), 035704, 2012
36 2012 Deep traps analysis in AlGaN/GaN heterostructure transistors W Chikhaoui, JM Bluet, C Bru‐Chevallier, C Dua, R Aubry
physica status solidi c 7 (1), 92-95, 2010
35 2010 MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers V Celibert, E Tranvouez, G Guillot, C Bru-Chevallier, L Grenouillet, ...
Journal of crystal growth 275 (1-2), e2313-e2319, 2005
34 2005 Size and shape effects on excitons and biexcitons in single InAs∕ InP quantum dots N Chauvin, B Salem, G Bremond, G Guillot, C Bru-Chevallier, M Gendry
Journal of applied physics 100 (7), 2006
33 2006 Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate MHH Alouane, R Anufriev, N Chauvin, H Khmissi, K Naji, B Ilahi, H Maaref, ...
Nanotechnology 22 (40), 405702, 2011
30 2011 Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors C Bru-Chevallier, H Chouaib, J Arcamone, T Benyattou, H Lahreche, ...
Thin Solid Films 450 (1), 151-154, 2004
30 2004 Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs N Malbert, N Labat, A Curutchet, C Sury, V Hoel, JC de Jaeger, ...
Microelectronics Reliability 49 (9-11), 1216-1221, 2009
29 2009 Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates N Chauvin, MH Hadj Alouane, R Anufriev, H Khmissi, K Naji, G Patriarche, ...
Applied Physics Letters 100 (1), 2012
27 2012 Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001) E Dupuy, P Regreny, Y Robach, M Gendry, N Chauvin, E Tranvouez, ...
Applied physics letters 89 (12), 2006
26 2006 InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates H Khmissi, K Naji, MHH Alouane, N Chauvin, C Bru-Chevallier, B Ilahi, ...
Journal of Crystal Growth 344 (1), 45-50, 2012
25 2012 Microphotoluminescence of exciton and biexciton around 1.5 μm from a single InAs∕ InP (001) quantum dot G Saint-Girons, N Chauvin, A Michon, G Patriarche, G Beaudoin, ...
Applied physics letters 88 (13), 2006
24 2006 