Improvements and considerations for size distribution retrieval from small-angle scattering data by Monte Carlo methods BR Pauw, JS Pedersen, S Tardif, M Takata, BB Iversen
Journal of applied crystallography 46 (2), 365-371, 2013
61 2013 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ...
Applied Physics Letters 107 (19), 191904, 2015
59 2015 Metal-Insulator Transition by Isovalent Anion Substitution in Ga1−xMnxAs: Implications to Ferromagnetism ODD P. R. Stone, K. Alberi, S. K. Z. Tardif, J. W. Beeman, K. M. Yu, W ...
Physical Review Letters 101 (8), 087203, 2008
41 2008 Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ...
ACS photonics 3 (10), 1907-1911, 2016
38 2016 Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo
Nano letters 15 (4), 2429-2433, 2015
37 2015 Gate-tunable gigantic lattice deformation in VO2 D Okuyama, M Nakano, S Takeshita, H Ohsumi, S Tardif, K Shibuya, ...
Applied Physics Letters 104 (2), 023507, 2014
35 2014 All-in–all-out magnetic domains: X-ray diffraction imaging and magnetic field control S Tardif, S Takeshita, H Ohsumi, J Yamaura, D Okuyama, Z Hiroi, ...
Physical review letters 114 (14), 147205, 2015
30 2015 Structure and magnetism of A Jain, M Jamet, A Barski, T Devillers, IS Yu, C Porret, ...
Journal of Applied Physics 109 (1), 013911, 2011
30 2011 Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ...
Applied Physics Letters 108 (24), 241902, 2016
25 2016 Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn E Arras, F Lançon, I Slipukhina, É Prestat, M Rovezzi, S Tardif, A Titov, ...
Physical Review B 85 (11), 115204, 2012
23 2012 Interface-driven phase separation in multifunctional materials: The case of the ferromagnetic semiconductor GeMn E Arras, F Lançon, I Slipukhina, É Prestat, M Rovezzi, S Tardif, A Titov, ...
Physical Review B 85 (11), 115204, 2012
23 2012 Operando Raman Spectroscopy and Synchrotron X-ray Diffraction of Lithiation/Delithiation in Silicon Nanoparticle AnodesS Tardif, E Pavlenko, L Quazuguel, M Boniface, M Maréchal, JS Micha, ...
ACS nano 11 (11), 11306-11316, 2017
21 2017 Strain and correlation of self-organized S Tardif, V Favre-Nicolin, F Lançon, E Arras, M Jamet, A Barski, C Porret, ...
Physical Review B 82 (10), 104101, 2010
21 2010 Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content A Gassenq, L Milord, J Aubin, K Guilloy, S Tardif, N Pauc, J Rothman, ...
Applied Physics Letters 109 (24), 242107, 2016
19 2016 Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers V Reboud, A Gassenq, K Guilloy, GO Dias, JM Escalante, S Tardif, ...
Silicon Photonics XI 9752, 97520F, 2016
18 2016 Germanium based photonic components toward a full silicon/germanium photonic platform V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ...
Progress in Crystal Growth and Characterization of Materials 63 (2), 1-24, 2017
17 2017 Exchange bias in GeMn nanocolumns: The role of surface oxidation S Tardif, S Cherifi, M Jamet, T Devillers, A Barski, D Schmitz, N Darowski, ...
Applied Physics Letters 97 (6), 062501, 2010
16 2010 Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ...
Journal of Applied Physics 121 (5), 055702, 2017
15 2017 Lattice strain and tilt mapping in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow filtering S Tardif, A Gassenq, K Guilloy, N Pauc, G Osvaldo Dias, JM Hartmann, ...
Journal of Applied Crystallography 49 (5), 1402-1411, 2016
12 2016 Study of the light emission in Ge layers and strained membranes on Si substrates A Gassenq, K Guilloy, N Pauc, JM Hartmann, GO Dias, D Rouchon, ...
Thin Solid Films 613, 64-67, 2016
12 2016 
Kévin GuilloyDepartment of Physics and Astronomy, Aarhus UniversitetAdresse e-mail validée de phys.au.dk
