| Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ... Applied Physics Letters 94 (26), 2009 | 101 | 2009 |
| Axial SiGe heteronanowire tunneling field-effect transistors ST Le, P Jannaty, X Luo, A Zaslavsky, DE Perea, SA Dayeh, ST Picraux Nano letters 12 (11), 5850-5855, 2012 | 49 | 2012 |
| Growth, electrical rectification, and gate control in axial in situ doped pn junction germanium nanowires ST Le, P Jannaty, A Zaslavsky, SA Dayeh, ST Picraux Applied Physics Letters 96 (26), 2010 | 27 | 2010 |
| Shot-noise-induced failure in nanoscale flip-flops part II: Failure rates in 10-nm ultimate CMOS P Jannaty, FC Sabou, ST Le, M Donato, RI Bahar, W Patterson, J Mundy, ... IEEE transactions on electron devices 59 (3), 807-812, 2012 | 9 | 2012 |
| Two-dimensional Markov chain analysis of radiation-induced soft errors in subthreshold nanoscale CMOS devices P Jannaty, FC Sabou, M Gadlage, RI Bahar, J Mundy, W Patterson, ... IEEE Transactions on Nuclear Science 57 (6), 3768-3774, 2010 | 8 | 2010 |
| Full two-dimensional Markov chain analysis of thermal soft errors in subthreshold nanoscale CMOS devices P Jannaty, FC Sabou, RI Bahar, J Mundy, WR Patterson, A Zaslavsky IEEE Transactions on Device and Materials Reliability 11 (1), 50-59, 2010 | 6 | 2010 |
| Shot-Noise-Induced Failure in Nanoscale Flip-Flops—Part I: Numerical Framework P Jannaty, FC Sabou, ST Le, M Donato, RI Bahar, W Patterson, J Mundy, ... IEEE transactions on electron devices 59 (3), 800-806, 2012 | 4 | 2012 |
| Sharp-switching high-current tunneling devices A Zaslavsky, J Wan, ST Le, P Jannaty, S Cristoloveanu, C Le Royer, ... ECS Transactions 53 (5), 63, 2013 | 3 | 2013 |
| Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices P Jannaty, FC Sabou, RI Bahar, J Mundy, WR Patterson, A Zaslavsky Proceedings of the 20th symposium on Great lakes symposium on VLSI, 281-286, 2010 | 2 | 2010 |
| Axial Si/Ge hetero-nanowires for tunneling transistors S Le, D Perea, P Jannaty, X Luo, S Dayeh, A Zaslavsky, T Picraux APS March Meeting Abstracts 2013, Y6. 002, 2013 | | 2013 |
| Photovoltaic properties of axial in-situ doped SiGe heteronanowires ST Le, AD Mohite, DE Perea, H Htoon, P Jannaty, A Zaslavsky, ... APS March Meeting Abstracts 2012, Z7. 003, 2012 | | 2012 |
| Ultrathin germanium-on-insulator tunneling field effect transistors D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier APS March Meeting Abstracts, Y28. 009, 2009 | | 2009 |
