Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional systems and nanostructures 83, 95-100, 2016
104 2016 Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
77 2017 InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
69 2018 The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal
Microelectronics Journal 46 (12), 1387-1391, 2015
53 2015 Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
51 2018 Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal
Superlattices and Microstructures 78, 210-223, 2015
44 2015 Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
43 2019 Handbook for III-V high electron mobility transistor technologies D Nirmal, J Ajayan
CRC Press, 2019
37 2019 A new drain current model for a dual metal junctionless transistor for enhanced digital circuit performance JC Pravin, D Nirmal, P Prajoon, MA Menokey
IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016
37 2016 Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor JC Pravin, D Nirmal, P Prajoon, NM Kumar, J Ajayan
Superlattices and Microstructures 104, 470-476, 2017
35 2017 A review of blue light emitting diodes for future solid state lighting and visible light communication applications M Manikandan, D Nirmal, J Ajayan, P Mohankumar, P Prajoon, ...
Superlattices and Microstructures 136, 106294, 2019
30 2019 Investigation of breakdown performance in J Ajayan, T Ravichandran, P Prajoon, JC Pravin, D Nirmal
Journal of Computational Electronics 17 (1), 265-272, 2018
28 2018 Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
AEU-International Journal of Electronics and Communications 84, 387-393, 2018
26 2018 A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement P Prajoon, D Nirmal, MA Menokey, JC Pravin
Superlattices and Microstructures 96, 155-163, 2016
19 2016 Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique V Sandeep, JC Pravin, AR Babu, P Prajoon
IEEE Transactions on Electron Devices 67 (9), 3558-3563, 2020
17 2020 Nanoscale high-k dielectrics for junctionless nanowire transistor for drain current analysis JC Pravin, P Prajoon, FP Nesamania, G Srikesh, P Senthil Kumar, ...
Journal of Electronic Materials 47, 2679-2686, 2018
17 2018 Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model P Prajoon, D Nirmal, MA Menokey, JC Pravin
Journal of Computational Electronics 15, 1511-1520, 2016
15 2016 Efficiency enhancement of InGaN MQW LED using compositionally step graded InGaN barrier on SiC substrate P Prajoon, D Nirmal, MA Menokey, JC Pravin
Journal of Display Technology 12 (10), 1117-1121, 2016
12 2016 Investigation of DC and RF performance of novel MOSHEMT on silicon substrate for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
Semiconductors 52, 1991-1997, 2018
10 2018 Numerical investigation of traps and optical response in III-V nitride quantum LED M Manikandan, D Nirmal, J Ajayan, L Arivazhagan, P Prajoon, ...
optical and quantum electronics 52, 1-9, 2020
9 2020 
Dr.D.NirmalAssociate Dean Engineering and Technology, Karunya UniversityAdresse e-mail validée de karunya.edu
