Laurent Cerutti
Laurent Cerutti
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On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
J Ristić, E Calleja, S Fernández-Garrido, L Cerutti, A Trampert, U Jahn, ...
Journal of crystal growth 310 (18), 4035-4045, 2008
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
E Calleja, J Ristić, S Fernández‐Garrido, L Cerutti, MA Sánchez‐García, ...
physica status solidi (b) 244 (8), 2816-2837, 2007
Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy
L Cerutti, J Ristić, S Fernández-Garrido, E Calleja, A Trampert, KH Ploog, ...
Applied physics letters 88 (21), 213114, 2006
Silicon-based photonic integration beyond the telecommunication wavelength range
G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection
JB Rodriguez, P Christol, L Cerutti, F Chevrier, A Joullié
Journal of Crystal Growth 274 (1-2), 6-13, 2005
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini
IEEE Photonics Technology Letters 17 (10), 2020-2022, 2005
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm
E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ...
Optics express 21 (5), 6101-6108, 2013
Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si
JR Reboul, L Cerutti, JB Rodriguez, P Grech, E Tournié
Applied Physics Letters 99 (12), 121113, 2011
GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55m at Room Temperature
L Cerutti, JB Rodriguez, E Tournié
IEEE photonics technology letters 22 (8), 553-555, 2010
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
GaSb-based, type-I laser fabricated on GaAs substrate operating continuous wave at room temperature
JB Rodriguez, L Cerutti, E Tournié
Applied Physics Letters 94 (2), 023506, 2009
High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm
L Cerutti, A Garnache, A Ouvrard, F Genty
Journal of crystal growth 268 (1-2), 128-134, 2004
Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 µm
L Cerutti, A Garnache, F Genty, A Ouvrard, C Alibert
Electronics Letters 39 (3), 290-292, 2003
Localized surface plasmon resonances in highly doped semiconductors nanostructures
V N'Tsame Guilengui, L Cerutti, JB Rodriguez, E Tournié, T Taliercio
Applied Physics Letters 101 (16), 161113, 2012
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip
A Gassenq, N Hattasan, L Cerutti, JB Rodriguez, E Tournié, G Roelkens
Optics Express 20 (11), 11665-11672, 2012
2-2.7 μm single frequency tunable sb-based lasers operating in cw at rt: microcavity and external cavity vcsels, dfb
A Garnache, A Ouvrard, L Cerutti, D Barat, A Vicet, F Genty, Y Rouillard, ...
Semiconductor Lasers and Laser Dynamics II 6184, 61840N, 2006
Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm
A Ducanchez, L Cerutti, P Grech, F Genty, E Tournié
Electronics letters 45 (5), 265-267, 2009
Room-temperature operation of a electrically pumped laser fabricated on a silicon substrate
JB Rodriguez, L Cerutti, P Grech, E Tournié
Applied Physics Letters 94 (6), 061124, 2009
Brewster “mode” in highly doped semiconductor layers: an all-optical technique to monitor doping concentration
T Taliercio, VN Guilengui, L Cerutti, E Tournié, JJ Greffet
Optics express 22 (20), 24294-24303, 2014
All-semiconductor plasmonic gratings for biosensing applications in the mid-infrared spectral range
FB Barho, F Gonzalez-Posada, MJ Milla-Rodrigo, M Bomers, L Cerutti, ...
Optics express 24 (14), 16175-16190, 2016
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