Design issues and considerations for low-cost 3-D TSV IC technology G Van der Plas, P Limaye, I Loi, A Mercha, H Oprins, C Torregiani, S Thijs, ... IEEE Journal of Solid-State Circuits 46 (1), 293-307, 2010 | 394 | 2010 |
Design methodology for MuGFET ESD protection devices S Thijs, D Linten, DE Trémouilles US Patent 7,923,266, 2011 | 196 | 2011 |
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS D Linten, S Thijs, MI Natarajan, P Wambacq, W Jeamsaksiri, J Ramos, ... IEEE Journal of Solid-State Circuits 40 (7), 1434-1442, 2005 | 189 | 2005 |
Low-power 5 GHz LNA and VCO in 90 nm RF CMOS D Linten, L Aspemyr, W Jeamsaksiri, J Ramos, A Mercha, S Jenei, S Thijs, ... 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004 | 123 | 2004 |
A low-power 57-to-66GHz transceiver in 40nm LP CMOS with− 17dB EVM at 7Gb/s V Vidojkovic, G Mangraviti, K Khalaf, V Szortyka, K Vaesen, W Van Thillo, ... 2012 IEEE International Solid-State Circuits Conference, 268-270, 2012 | 100 | 2012 |
50-to-67GHz ESD-protected power amplifiers in digital 45nm LP CMOS K Raczkowski, S Thijs, W De Raedt, B Nauwelaers, P Wambacq 2009 IEEE International Solid-State Circuits Conference-Digest of Technical …, 2009 | 80 | 2009 |
T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 53 | 2007 |
Calibrated wafer-level HBM measurements for quasi-static and transient device analysis M Scholz, S Thijs, D Linten, D Tremouilles, M Sawada, T Nakaei, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 50 | 2007 |
Integration of a 90nm RF CMOS technology (200GHz f/sub max/-150GHz f/sub T/NMOS) demonstrated on a 5GHz LNA W Jeamsaksiri, A Mercha, J Ramos, D Linten, S Thijs, S Jenei, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 100-101, 2004 | 49 | 2004 |
Electrostatic discharge protected circuits S Thijs, NM Iyer, D Linten US Patent 7,649,722, 2010 | 45 | 2010 |
Advanced SCR ESD protection circuits for CMOS/SOI nanotechnologies MPJ Mergens, O Marichal, S Thijs, B Van Camp, CC Russ Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005 …, 2005 | 45 | 2005 |
A fully integrated 7.3 kV HBM ESD-protected transformer-based 4.5–6 GHz CMOS LNA J Borremans, S Thijs, P Wambacq, Y Rolain, D Linten, M Kuijk IEEE journal of solid-state circuits 44 (2), 344-353, 2009 | 43 | 2009 |
Reliability issues in MuGFET nanodevices G Groeseneken, F Crupi, A Shickova, S Thijs, D Linten, B Kaczer, ... 2008 IEEE International Reliability Physics Symposium, 52-60, 2008 | 42 | 2008 |
Imaging in short-wave infrared with 1.82 μm pixel pitch quantum dot image sensor J Lee, E Georgitzikis, Y Li, Z Lin, J Park, I Lieberman, D Cheyns, ... 2020 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2020 | 35 | 2020 |
Understanding the optimization of sub-45nm FinFET devices for ESD applications D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 34 | 2007 |
Transient voltage overshoot in TLP testing—Real or artifact? D Tremouilles, S Thijs, P Roussel, MI Natarajan, V Vassilev, ... 2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2005 | 34 | 2005 |
Next generation bulk FinFET devices and their benefits for ESD robustness A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ... 2009 31st EOS/ESD Symposium, 1-10, 2009 | 33 | 2009 |
ESD on-wafer characterization: Is TLP still the right measurement tool? M Scholz, D Linten, S Thijs, S Sangameswaran, M Sawada, T Nakaei, ... IEEE Transactions on Instrumentation and Measurement 58 (10), 3418-3426, 2009 | 32 | 2009 |
Perspective of RF design in future planar and FinFET CMOS J Borremans, B Parvais, M Dehan, S Thijs, P Wambacq, A Mercha, ... 2008 IEEE Radio Frequency Integrated Circuits Symposium, 75-78, 2008 | 31 | 2008 |
HBM ESD robustness of GaN-on-Si Schottky diodes SH Chen, A Griffoni, P Srivastava, D Linten, S Thijs, M Scholz, M Denis, ... IEEE Transactions on Device and Materials Reliability 12 (4), 589-598, 2012 | 30 | 2012 |