| Time-dependent dielectric breakdown of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, MH White, A Salemi, D Sheridan, AK Agarwal IEEE Journal of the Electron Devices Society 9, 633-639, 2021 | 35 | 2021 |
| Monolithic integration of lateral HV power MOSFET with LV CMOS for SiC power IC technology SB Isukapati, H Zhang, T Liu, E Ashik, B Lee, AJ Morgan, W Sung, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 28 | 2021 |
| Investigation of gate leakage current behavior for commercial 1.2 kV 4H-SiC power MOSFETs S Zhu, T Liu, MH White, AK Agarwal, A Salemi, D Sheridan 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 27 | 2021 |
| Body diode reliability of commercial SiC power MOSFETs M Kang, S Yu, D Xing, T Liu, A Salemi, K Booth, S Zhu, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 25 | 2019 |
| Gate oxide reliability studies of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 21 | 2020 |
| Current saturation characteristics and single-pulse short-circuit tests of commercial SiC MOSFETs D Xing, B Hu, S Yu, Y Zhang, T Liu, A Salemi, M Kang, J Wang, A Agarwal 2019 IEEE Energy Conversion Congress and Exposition (ECCE), 6179-6183, 2019 | 19 | 2019 |
| Gate leakage current and time-dependent dielectric breakdown measurements of commercial 1.2 kV 4H-SiC power MOSFETs T Liu, S Zhu, S Yu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 17 | 2019 |
| Bias-induced threshold voltage instability and interface trap density extraction of 4H-SiC MOSFETs S Yu, M Kang, T Liu, D Xing, A Salemi, MH White, AK Agarwal 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019 | 14 | 2019 |
| The road to a robust and affordable SiC power MOSFET technology HLR Maddi, S Yu, S Zhu, T Liu, L Shi, M Kang, D Xing, S Nayak, ... Energies 14 (24), 8283, 2021 | 13 | 2021 |
| Development of Isolated CMOS and HV MOSFET on an N- epi/P- epi/4H-SiC N+ Substrate for Power IC Applications SB Isukapati, AJ Morgan, W Sung, H Zhang, T Liu, A Fayed, AK Agarwal, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 12 | 2021 |
| Threshold voltage instability of commercial 1.2 kV SiC power MOSFETs S Yu, T Liu, S Zhu, D Xing, A Salemi, M Kang, K Booth, MH White, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 10 | 2020 |
| Design strategies for rugged SiC power devices D Xing, T Liu, S Yu, M Kang, A Salemi, M White, A Agarwal 2019 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2019 | 10 | 2019 |
| Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs S Zhu, T Liu, J Fan, HLR Maddi, MH White, AK Agarwal Materials 15 (17), 5995, 2022 | 9 | 2022 |
| Effects of oxide electric field stress on the gate oxide reliability of commercial SiC power MOSFETs L Shi, T Liu, S Zhu, J Qian, M Jin, HLR Maddi, MH White, AK Agarwal 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 8 | 2022 |
| Comparison of gate oxide lifetime predictions with charge-to-breakdown approach and constant-voltage TDDB on SiC power MOSFET S Zhu, T Liu, L Shi, M Jin, HLR Maddi, MH White, AK Agarwal 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 7 | 2021 |
| JFET Region Design Trade-Offs of 650 V 4H-SiC Planar Power MOSFETs T Liu, S Zhu, A Salemi, D Sheridan, MH White, AK Agarwal Solid State Electronics Letters 3, 53-58, 2021 | 6 | 2021 |
| Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs L Shi, S Zhu, J Qian, M Jin, M Bhattacharya, MH White, AK Agarwal, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2023 | 5 | 2023 |
| Gate oxide reliability of 4H-SiC MOSFETs T Liu The Ohio State University, 2022 | 5 | 2022 |
| SPICE modeling and CMOS circuit development of a SiC power IC technology T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ... 2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS …, 2021 | 5 | 2021 |
| Spice modeling and circuit demonstration of a sic power ic technology T Liu, H Zhang, SB Isukapati, E Ashik, AJ Morgan, B Lee, W Sung, ... IEEE Journal of the Electron Devices Society 10, 129-138, 2022 | 4 | 2022 |
Anant AgarwalProfessor of Electrical Engineering, Ohio State UniversityAdresse e-mail validée de ieee.org
