| 2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects S Kanungo, G Ahmad, P Sahatiya, A Mukhopadhyay, S Chattopadhyay npj 2D Materials and Applications 6 (1), 83, 2022 | 27 | 2022 |
| Performance analysis of uniaxially strained monolayer black phosphorus and blue phosphorus n-MOSFET and p-MOSFET L Banerjee, A Mukhopadhyay, A Sengupta, H Rahaman Journal of Computational Electronics 15 (3), 919-930, 2016 | 22 | 2016 |
| Analysis of a temperature-dependent delay optimization model for GNR interconnects using a wire sizing method S Bhattacharya, S Das, A Mukhopadhyay, D Das, H Rahaman Journal of Computational Electronics 17, 1536-1548, 2018 | 19 | 2018 |
| Effect of stacking order on device performance of bilayer black phosphorene-field-effect transistor A Mukhopadhyay, L Banerjee, A Sengupta, H Rahaman Journal of Applied Physics 118 (22), 224501, 2015 | 10 | 2015 |
| Analysis of tunneling currents in multilayer black phosphorous and MoS2 non-volatile flash memory cells B Sharma, A Mukhopadhyay, A Sengupta, H Rahaman, CK Sarkar Journal of Computational Electronics, 1-9, 2015 | 9 | 2015 |
| Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ memory device B Sharma, A Mukhopadhyay, L Banerjee, A Sengupta, H Rahaman, ... Microsystem Technologies 25, 1909-1917, 2019 | 8 | 2019 |
| The effect of the stacking arrangement on the device behavior of bilayer MoS 2 FETs A Mukhopadhyay, S Kanungo, H Rahaman Journal of Computational Electronics, 1-8, 2021 | 7 | 2021 |
| Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in magnetic tunnel junction memory device properties Bikash, A Sengupta, Mukhopadhyay, L Banerjee, A Sharma, H Rahaman, ... Devices for Integrated Circuit (DevIC), 2017, 2017 | 3 | 2017 |
| Minimization of crosstalk noise and delay using reduced graphene nano ribbon (GNR) interconnect S Bhattacharya, S Das, S Tayal, J Ajayan, L Joseph, TK Juluru, ... Microelectronics Journal 127, 105533, 2022 | 2 | 2022 |
| First Principle Calculation Based Investigation on the Two-Dimensional Sandwiched Tri-Layer van der Waals Heterostructures of MoSe2 and SnS2 D Som, A Paul, Tanu, A Mukhopadhyay, N Thakur, S Kanungo Modelling, Simulation and Intelligent Computing 659, 40-47, 2020 | 2 | 2020 |
| Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs A MUKHOPADHYAY, TK MAITI, S BHATTACHARYA, T IIZUKA, ... IEICE Transactions on Electronics 102 (6), 487-494, 2019 | 2 | 2019 |
| A Hybrid Atomistic - Semi-Analytical Modeling on Schottky Barrier Au-MoS2-Au MOSFETs A Mukhopadhyay, S Bhattacharya, PS Gupta, L Banerjee, A Sengupta, ... 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 46-50, 2018 | 2 | 2018 |
| MOSFET optimization toward power efficient circuit design A Mukhopadhyay, S Bhattacharya, T Iizuka, TK Maiti, M Miura-Mattausch, ... 2018 International Symposium on Devices, Circuits and Systems (ISDCS), 1-4, 2018 | 2 | 2018 |
| Performance Analysis of Schottky Barrier Height Modulation in Strained (10, 0) MoS2 Armchair Nano Ribbon-Metal Junction L Banerjee, A Mukhopadhyay, PS Gupta, A Sengupta, H Rahaman 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 1-4, 2018 | 1 | 2018 |
| Impact of Defects on Electronic Transmission Properties and Spin Transport in Monolayer Silicene S Banerjee, M Ghosh, A Mukhopadhyay, SI Mallick, L Banerjee Advances in Industrial Engineering and Management 5 (1), 124-129, 2016 | 1 | 2016 |
| Study of Defects and their Impact on Transport and Thermoelectric Properties in Monolayer Silicene: an Ab Initio Simulation M Ghosh, S Banerjee, A Mukhopadhyay, SI Mallick, L Banerjee Advances in Industrial Engineering and Management 5 (1), 118-123, 2016 | 1 | 2016 |
| Strain modulated variations in monolayer phosphorene n-MOSFET A Mukhopadhyay, L Banerjee, A Sengupta, H Rahaman IEEE International Conference on Electron Devices and Solid-State Circuits …, 2015 | 1 | 2015 |
| A First Principle Based Investigation on the Effects of Stacking Configuration and Biaxial Strain on the Electronic Properties of Bilayer MoS2 PP Anand, P Parshi, V Jain, S Bhattacharya, A Mukhopadhyay, ... 2021 International Symposium on Devices, Circuits and Systems (ISDCS), 1-5, 2021 | | 2021 |
| Performance Analysis of 2D Materials for Designing New Generation Nanoscale FETs A Mukhopadhyay Shibpur, 2019 | | 2019 |
| Effect of Uniaxial Strain on Properties of Blue Phosphorene-CNT Heterojunction A Mukhopadhyay, A Sengupta, H Rahaman 2019 Devices for Integrated Circuit (DevIC), 131-133, 2019 | | 2019 |
Hafizur RahamanIndian Institute of Engineering Science and Technology, ShibpurAdresse e-mail validée de it.iiests.ac.in
