| Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry E Iliopoulos, A Adikimenakis, C Giesen, M Heuken, A Georgakilas Applied Physics Letters 92 (19), 2008 | 129 | 2008 |
| Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ... Journal of crystal growth 278 (1-4), 426-430, 2005 | 82 | 2005 |
| Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas Applied physics letters 88 (19), 2006 | 73 | 2006 |
| InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ... physica status solidi (a) 203 (1), 102-105, 2006 | 71 | 2006 |
| Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ... Applied Physics Letters 95 (2), 2009 | 62 | 2009 |
| Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys M Androulidaki, NT Pelekanos, K Tsagaraki, E Dimakis, E Iliopoulos, ... physica status solidi c 3 (6), 1866-1869, 2006 | 51 | 2006 |
| The role of nucleation temperature in In-face InN-on-GaN (0001) growth by plasma-assisted molecular beam epitaxy E Dimakis, G Konstantinidis, K Tsagaraki, A Adikimenakis, E Iliopoulos, ... Superlattices and Microstructures 36 (4-6), 497-507, 2004 | 46 | 2004 |
| Potassium selective chemically modified field effect transistors based on AlGaN/GaN two-dimensional electron gas heterostructures Y Alifragis, A Volosirakis, NA Chaniotakis, G Konstantinidis, ... Biosensors and Bioelectronics 22 (12), 2796-2801, 2007 | 39 | 2007 |
| Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy JE Kruse, L Lymperakis, S Eftychis, A Adikimenakis, G Doundoulakis, ... Journal of Applied Physics 119 (22), 2016 | 38 | 2016 |
| High electron mobility transistors based on the AlN/GaN heterojunction A Adikimenakis, KE Aretouli, E Iliopoulos, A Kostopoulos, K Tsagaraki, ... Microelectronic Engineering 86 (4-6), 1071-1073, 2009 | 38 | 2009 |
| Structural properties of 10 μm thick InN grown on sapphire (0001) E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ... Superlattices and Microstructures 40 (4-6), 246-252, 2006 | 37 | 2006 |
| InN films and nanostructures grown on Si (1 1 1) by RF-MBE AO Ajagunna, A Adikimenakis, E Iliopoulos, K Tsagaraki, M Androulidaki, ... Journal of crystal growth 311 (7), 2058-2062, 2009 | 33 | 2009 |
| GaN micromachined FBAR structures for microwave applications A Müller, D Neculoiu, D Vasilache, D Dascalu, G Konstantinidis, ... Superlattices and Microstructures 40 (4-6), 426-431, 2006 | 28 | 2006 |
| Spontaneous growth of III-nitride nanowires on Si by molecular beam epitaxy AP Vajpeyi, AO Ajagunna, G Tsiakatouras, A Adikimenakis, E Iliopoulos, ... Microelectronic engineering 86 (4-6), 812-815, 2009 | 27 | 2009 |
| Surface electronic properties of undoped InAlN alloys PDC King, TD Veal, A Adikimenakis, H Lu, LR Bailey, E Iliopoulos, ... Applied Physics Letters 92 (17), 2008 | 25 | 2008 |
| Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer A Bairamis, C Zervos, A Adikimenakis, A Kostopoulos, M Kayambaki, ... Applied Physics Letters 105 (11), 2014 | 23 | 2014 |
| Publications in journals OC Haenssler, MF Wieghaus, A Kostopoulos, G Doundoulakis, ... JOURNAL OF APPLIED PHYSICS 119, 224305, 2016 | 21 | 2016 |
| Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires S Eftychis, J Kruse, T Koukoula, T Kehagias, P Komninou, A Adikimenakis, ... Journal of Crystal Growth 442, 8-13, 2016 | 20 | 2016 |
| Nanofabrication of normally-off GaN vertical nanowire MESFETs G Doundoulakis, A Adikimenakis, A Stavrinidis, K Tsagaraki, ... Nanotechnology 30 (28), 285304, 2019 | 17 | 2019 |
| Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE A Adikimenakis, P Chatzopoulou, GP Dimitrakopulos, T Kehagias, ... ECS Journal of Solid State Science and Technology 9 (1), 015006, 2020 | 16 | 2020 |
