Ali Razavieh
Ali Razavieh
Adresse e-mail validée de globalfoundries.com
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14nm ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications
Z Krivokapic, U Rana, R Galatage, A Razavieh, A Aziz, J Liu, J Shi, ...
2017 IEEE International Electron Devices Meeting (IEDM), 15.1. 1-15.1. 4, 2017
1442017
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
CMESD A. Arnold, A. Razavieh, J. Nasr, D. Schulman
ACS Nano 11 (3), 3110–3118, 2017
1332017
Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs
S Dasgupta, A Rajashekhar, K Majumdar, N Agrawal, A Razavieh, ...
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015
1102015
Challenges and limitations of CMOS scaling for FinFET and beyond architectures
A Razavieh, P Zeitzoff, EJ Nowak
IEEE Transactions on Nanotechnology 18, 999-1004, 2019
322019
Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors
A Razavieh, PK Mohseni, K Jung, S Mehrotra, S Das, S Suslov, X Li, ...
ACS nano 8 (6), 6281-6287, 2014
272014
The Prospect of Two-Dimensional Heterostructures: A review of recent breakthroughs
DS Schulman, AJ Arnold, A Razavieh, J Nasr, S Das
IEEE Nanotechnology Magazine 11 (2), 6 - 17, 2017
202017
Channel geometry impact and narrow sheet effect of stacked nanosheet
CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ...
2018 IEEE International Electron Devices Meeting (IEDM), 28.6. 1-28.6. 4, 2018
172018
Utilizing the unique properties of nanowire MOSFETs for RF applications
A Razavieh, S Mehrotra, N Singh, G Klimeck, D Janes, J Appenzeller
Nano letters 13 (4), 1549-1554, 2013
142013
Scaling challenges of FinFET architecture below 40nm contacted gate pitch
A Razavieh, P Zeitzoff, DE Brown, G Karve, EJ Nowak
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
122017
Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit
A Razavieh, DB Janes, J Appenzeller
IEEE transactions on electron devices 60 (6), 2071-2076, 2013
102013
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
J Frougier, A Razavieh, R Xie, S Bentley
US Patent 9,991,352, 2018
82018
A new method to achieve RF linearity in SOI nanowire MOSFETs
A Razavieh, N Singh, A Paul, G Klimeck, D Janes, J Appenzeller
RFIC Symp, 167-170, 2011
82011
Effective drive current in scaled FinFET and NSFET CMOS inverters
A Razavieh, Y Deng, P Zeitzoff, MR Na, J Frougier, G Karve, DE Brown, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
72018
Complementary FETs with wrap around contacts and method of forming same
J Frougier, R Xie, PH Suvarna, H Niimi, SJ Bentley, A Razavieh
US Patent 10,192,867, 2019
62019
Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly
OZ Gall, X Zhong, DS Schulman, M Kang, A Razavieh, TS Mayer
Nanotechnology 28 (26), 265501, 2017
42017
FinFET with contact over active-gate for 5G ultra-wideband applications
A Razavieh, V Mahajan, WL Oo, S Cimino, SV Khokale, K Nagahiro, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
22020
Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system
J Frougier, N Loubet, R Xie, D Chanemougame, A Razavieh, K Cheng
US Patent 10,170,520, 2019
22019
Ge/Si Core/Shell Nanowire Structures for Tunneling Devices
JT Smith, Y Zhao, A Razavieh, C Yang, J Appenzeller
ECS Transactions 33 (6), 707, 2010
22010
Steep-switch field effect transistor with integrated bi-stable resistive system
J Frougier, N Loubet, R Xie, D Chanemougame, A Razavieh, K Cheng
US Patent 10,872,962, 2020
12020
Steep-switch field effect transistor with integrated bi-stable resistive system
J Frougier, N Loubet, R Xie, D Chanemougame, A Razavieh, K Cheng
US Patent App. 15/894,108, 2019
12019
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