| Plasma-enhanced atomic layer deposition of silicon nitride using a novel silylamine precursor JM Park, SJ Jang, LL Yusup, WJ Lee, SI Lee ACS Applied Materials & Interfaces 8 (32), 20865-20871, 2016 | 63 | 2016 |
| Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride LL Yusup, JM Park, YH Noh, SJ Kim, WJ Lee, S Park, YK Kwon RSC advances 6 (72), 68515-68524, 2016 | 43 | 2016 |
| Atomic layer deposition of copper nitride film and its application to copper seed layer for electrodeposition JM Park, K Jin, B Han, MJ Kim, J Jung, JJ Kim, WJ Lee Thin Solid Films 556, 434-439, 2014 | 35 | 2014 |
| Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride LL Yusup, JM Park, TR Mayangsari, YK Kwon, WJ Lee Applied Surface Science 432, 127-131, 2018 | 29 | 2018 |
| Novel cyclosilazane-type silicon precursor and two-step plasma for plasma-enhanced atomic layer deposition of silicon nitride JM Park, SJ Jang, SI Lee, WJ Lee ACS applied materials & interfaces 10 (10), 9155-9163, 2018 | 28 | 2018 |
| Atomic layer deposition of cobalt oxide thin films using cyclopentadienylcobalt dicarbonyl and ozone at low temperatures B Han, K Ha Choi, J Min Park, J Woo Park, J Jung, WJ Lee Journal of Vacuum Science & Technology A 31 (1), 2013 | 20 | 2013 |
| Atomic layer deposition of stoichiometric Co3O4 films using bis (1, 4-di-iso-propyl-1, 4-diazabutadiene) cobalt B Han, JM Park, KH Choi, WK Lim, TR Mayangsari, W Koh, WJ Lee Thin Solid Films 589, 718-722, 2015 | 17 | 2015 |
| Catalyzed atomic layer deposition of silicon oxide at ultralow temperature using alkylamine TR Mayangsari, JM Park, LL Yusup, J Gu, JH Yoo, HD Kim, WJ Lee Langmuir 34 (23), 6660-6669, 2018 | 14 | 2018 |
| Study of surface reaction during selective epitaxy growth of silicon by thermodynamic analysis and density functional theory calculation TR Mayangsari, LL Yusup, JM Park, E Blanquet, M Pons, J Jung, WJ Lee Journal of Crystal Growth 468, 278-282, 2017 | 12 | 2017 |
| Plasma-enhanced atomic layer deposition of nickel thin film using bis (1, 4-diisopropyl-1, 4-diazabutadiene) nickel JM Park, S Kim, J Hwang, WS Han, W Koh, WJ Lee Journal of Vacuum Science & Technology A 36 (1), 2018 | 11 | 2018 |
| Reaction mechanism for atomic layer deposition of germanium ditelluride thin films B Han, YJ Kim, JM Park, LL Yusup, J Shin, WJ Lee Journal of Nanoscience and Nanotechnology 17 (5), 3472-3476, 2017 | 6 | 2017 |
| Reaction mechanism underlying atomic layer deposition of antimony telluride thin films B Han, YJ Kim, JM Park, LL Yusup, H Ishii, C Lansalot-Matras, WJ Lee Journal of Nanoscience and Nanotechnology 16 (5), 4924-4928, 2016 | 6 | 2016 |
| RSC Adv. 6, 68515 (2016) LL Yusup, JM Park, YH Noh, SJ Kim, WJ Lee, S Park, YK Kwon | 5 | |
| Electronic Supplementary Information Reactivity of Different Surface Sites with Silicon Chlorides during Atomic Layer Deposition of Silicon Nitride LL Yusup, JM Park, YH Noh, SJ Kim, WJ Leea, S Park, YK Kwonb | | |
