Hervé Morel
Hervé Morel
Senior Researcher (Directeur de Recherche), Univ Lyon, CNRS, INSA Lyon, Lab. Ampère
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State of the art of high temperature power electronics
C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ...
Materials Science and Engineering: B 176 (4), 283-288, 2011
Choosing a thermal model for electrothermal simulation of power semiconductor devices
A Ammous, S Ghedira, B Allard, H Morel, D Renault
IEEE transactions on Power Electronics 14 (2), 300-307, 1999
Transient temperature measurements and modeling of IGBT's under short circuit
A Ammous, B Allard, H Morel
IEEE transactions on power electronics 13 (1), 12-25, 1998
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
C Raynaud, D Tournier, H Morel, D Planson
Diamond and related materials 19 (1), 1-6, 2010
Thermal Stability of Silicon Carbide Power Diodes
C Buttay, C Raynaud, H Morel, G Civrac, ML Locatelli, F Morel
Electron Devices, IEEE Transactions on 59 (3), 761-769, 2012
Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors
H Reynes, C Buttay, H Morel
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel
Microelectronics Reliability 55 (9-10), 1708-1713, 2015
Die attach of power devices using silver sintering-bonding process optimization and characterization
C Buttay, A Masson, J Li, MC Johnson, M Lazar, C Raynaud, H Morel
HiTEN 2011, 1-7, 2011
Electrothermal modeling of IGBTs: Application to short-circuit conditions
A Ammous, K Ammous, H Morel, B Allard, D Bergogne, F Sellami, ...
IEEE Transactions on Power Electronics 15 (4), 778-790, 2000
On the extraction of PiN diode design parameters for validation of integrated power converter design
H Garrab, B Allard, H Morel, K Ammous, S Ghedira, A Amimi, K Besbes, ...
IEEE Transactions on Power Electronics 20 (3), 660-670, 2005
Design and implementation of integrated common mode capacitors for SiC-JFET inverters
R Robutel, C Martin, C Buttay, H Morel, P Mattavelli, D Boroyevich, ...
IEEE transactions on power electronics 29 (7), 3625-3636, 2013
State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: A novel approach
H Morel, SH Gamal, JP Chante
IEEE transactions on power electronics 9 (1), 112-120, 1994
Towards an airborne high temperature SiC inverter
D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ...
2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008
Field effect in large grain polycrystalline silicon
JP Colinge, H Morel, JP Chante
IEEE Transactions on Electron Devices 30 (3), 197-201, 1983
Full Densification of Molybdenum Powders Using Spark Plasma Sintering
B Mouawad, M Soueidan, D Fabregue, C Buttay, V Bley, B Allard, H Morel
Metallurgical and Materials Transactions A, 1-8, 2012
Normally-On SiC JFETs in power converters: Gate driver and safe operation
D Bergogne, D Risaletto, F Dubois, A Hammoud, H Morel, P Bevilacqua, ...
2010 6th International Conference on Integrated Power Electronics Systems, 1-6, 2010
Analysis of Power Switching Losses Accounting Probe Modeling
K Ammous, H Morel, A Ammous
Instrumentation and Measurement, IEEE Transactions on 59 (12), 3218-3226, 2010
Robustness in short-circuit mode of SiC MOSFETs
C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel
Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015
Power converter's optimisation and design. Discrete cost function with genetic based algorithms
H Helali, D Bergogne, JBH Slama, H Morel, P Bevilacqua, B Allard, ...
2005 European Conference on Power Electronics and Applications, 7 pp.-P. 7, 2005
Model requirements for simulation of low-voltage MOSFET in automotive applications
C Buttay, H Morel, B Allard, P Lefranc, O Brevet
IEEE transactions on Power Electronics 21 (3), 613-624, 2006
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