Hervé Morel
Hervé Morel
Senior Researcher (Directeur de Recherche), Univ Lyon, CNRS, INSA Lyon, Lab. Ampère
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State of the art of high temperature power electronics
C Buttay, D Planson, B Allard, D Bergogne, P Bevilacqua, C Joubert, ...
Materials Science and Engineering: B 176 (4), 283-288, 2011
Choosing a thermal model for electrothermal simulation of power semiconductor devices
A Ammous, S Ghedira, B Allard, H Morel, D Renault
IEEE Transactions on Power Electronics 14 (2), 300-307, 1999
Transient temperature measurements and modeling of IGBT's under short circuit
A Ammous, B Allard, H Morel
IEEE transactions on power electronics 13 (1), 12-25, 1998
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices
C Raynaud, D Tournier, H Morel, D Planson
Diamond and related materials 19 (1), 1-6, 2010
Thermal Stability of Silicon Carbide Power Diodes
C Buttay, C Raynaud, H Morel, G Civrac, ML Locatelli, F Morel
Electron Devices, IEEE Transactions on 59 (3), 761-769, 2012
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel
Microelectronics Reliability 55 (9-10), 1708-1713, 2015
Die attach of power devices using silver sintering-bonding process optimization and characterization
C Buttay, A Masson, J Li, MC Johnson, M Lazar, C Raynaud, H Morel
HiTEN 2011, 1-7, 2011
Electrothermal modeling of IGBTs: Application to short-circuit conditions
A Ammous, K Ammous, H Morel, B Allard, D Bergogne, F Sellami, ...
IEEE Transactions on Power Electronics 15 (4), 778-790, 2000
On the extraction of PIN diode design parameters for validation of integrated power converter design
H Garrab, B Allard, H Morel, K Ammous, S Ghedira, A Amimi, K Besbes, ...
IEEE Transactions on Power Electronics 20 (3), 660-670, 2005
Protruding ceramic substrates for high voltage packaging of wide bandgap semiconductors
H Reynes, C Buttay, H Morel
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
State variable modeling of the power pin diode using an explicit approximation of semiconductor device equations: A novel approach
H Morel, SH Gamal, JP Chante
IEEE transactions on power electronics 9 (1), 112-120, 1994
Towards an airborne high temperature SiC inverter
D Bergogne, H Morel, D Planson, D Tournier, P Bevilacqua, B Allard, ...
2008 IEEE Power Electronics Specialists Conference, 3178-3183, 2008
Field effect in large grain polycrystalline silicon
JP Colinge, H Morel, JP Chante
IEEE Transactions on Electron Devices 30 (3), 197-201, 1983
Design and implementation of integrated common mode capacitors for SiC-JFET inverters
R Robutel, C Martin, C Buttay, H Morel, P Mattavelli, D Boroyevich, ...
IEEE transactions on power electronics 29 (7), 3625-3636, 2013
Normally-On SiC JFETs in power converters: Gate driver and safe operation
D Bergogne, D Risaletto, F Dubois, A Hammoud, H Morel, P Bevilacqua, ...
2010 6th International Conference on Integrated Power Electronics Systems, 1-6, 2010
Analysis of Power Switching Losses Accounting Probe Modeling
K Ammous, H Morel, A Ammous
Instrumentation and Measurement, IEEE Transactions on 59 (12), 3218-3226, 2010
Robustness in short-circuit mode of SiC MOSFETs
C Chen, D Labrousse, S Lefebvre, M Petit, C Buttay, H Morel
Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015
Power converter's optimisation and design. Discrete cost function with genetic based algorithms
H Helali, D Bergogne, JBH Slama, H Morel, P Bevilacqua, B Allard, ...
2005 European Conference on Power Electronics and Applications, 7 pp.-P. 7, 2005
Model requirements for simulation of low-voltage MOSFET in automotive applications
C Buttay, H Morel, B Allard, P Lefranc, O Brevet
IEEE transactions on Power Electronics 21 (3), 613-624, 2006
Error in estimation of power switching losses based on electrical measurements
K Ammous, B Allard, O Brevet, HE Omari, D Bergogne, D Ligot, ...
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st …, 2000
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