| Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure D Pierucci, J Zribi, H Henck, J Chaste, MG Silly, F Bertran, P Le Fevre, ... Applied Physics Letters 112 (25), 2018 | 57 | 2018 |
| Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure J Zribi, L Khalil, B Zheng, J Avila, D Pierucci, T Brulé, J Chaste, E Lhuillier, ... npj 2D Materials and Applications 3 (1), 27, 2019 | 44 | 2019 |
| Ultra-clean high-mobility graphene on technologically relevant substrates A Tyagi, V Mišeikis, L Martini, S Forti, N Mishra, ZM Gebeyehu, ... Nanoscale 14 (6), 2167-2176, 2022 | 28 | 2022 |
| Evidence for a narrow band gap phase in 1T′ WS2 nanosheet D Pierucci, J Zribi, C Livache, C Gréboval, MG Silly, J Chaste, ... Applied Physics Letters 115 (3), 2019 | 27 | 2019 |
| Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals H Henck, D Pierucci, J Zribi, F Bisti, E Papalazarou, JC Girard, J Chaste, ... Physical Review Materials 3 (3), 034004, 2019 | 24 | 2019 |
| Structural and electronic transitions in few layers of isotopically pure hexagonal boron nitride J Zribi, L Khalil, J Avila, J Chaste, H Henck, F Oehler, B Gil, S Liu, ... Physical Review B 102 (11), 115141, 2020 | 8 | 2020 |
| Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers J Zribi, B Ilahi, D Morris, V Aimez, R Arès Journal of crystal growth 384, 21-26, 2013 | 7 | 2013 |
| Effect of dot-height truncation on the device performance of multilayer InAs/GaAs quantum dot solar cells J Zribi, B Ilahi, B Paquette, A Jaouad, O Thériault, K Hinzer, R Cheriton, ... IEEE Journal of Photovoltaics 6 (2), 584-589, 2016 | 5 | 2016 |
| Croissance et caractérisation des boîtes quantiques InAs/GaAs pour des applications photovoltaïques J Zribi Université de Sherbrooke, 2014 | 5 | 2014 |
| Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy J Zribi, D Morris, R Ares Journal of Vacuum Science & Technology B 30 (5), 2012 | 4 | 2012 |
| In-situ height engineering of quantum dots by chemical beam epitaxy J Zribi, D Morris, B Ilahi, A Aldhubaib, V Aimez, R Ares Journal of Nanophotonics 10 (3), 033502-033502, 2016 | 3 | 2016 |
| Tunable emission wavelength stacked InAs/GaAs quantum dots by chemical beam epitaxy for optical coherence tomography B Ilahi, J Zribi, M Guillotte, R Arès, V Aimez, D Morris Materials 9 (7), 511, 2016 | 3 | 2016 |
| Unidirectional Rashba spin splitting in single layer WS2 (1− x) Se2x alloy J Zribi, D Pierucci, F Bisti, B Zheng, J Avila, L Khalil, C Ernandes, J Chaste, ... Nanotechnology 34 (7), 075705, 2022 | 2 | 2022 |
| Two-Dimensional Lateral Multiheterostructures Possessing Tunable Band Alignments B Zheng, J Zribi, C Zhu, J Avila, J Chaste, X Sun, H Liu, Y Liu, Y Jiang, ... Chemistry of Materials 35 (17), 6745-6753, 2023 | 1 | 2023 |
| L’effet de la technique d’interdiffusion sur les propriétés optiques des boîtes quantiques InAs/GaAs J Zribi Library and Archives Canada= Bibliothèque et Archives Canada, Ottawa, 2010 | | 2010 |
| Croissance et caractérisation des boîtes quantiques d’InAs/GaAs pour des applications solaires J Zribi, D Morris, R Arès | | |
Richard ArèsUniversité de SherbrookeVerified email at usherbrooke.ca
