| Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system TH Kim, S Kim, K Hong, J Park, Y Hwang, BG Park, H Kim Chaos, Solitons & Fractals 153, 111587, 2021 | 38 | 2021 |
| 4‐bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random‐Access Memory Crossbar Array S Kim, J Park, TH Kim, K Hong, Y Hwang, BG Park, H Kim Advanced Intelligent Systems 4 (9), 2100273, 2022 | 33 | 2022 |
| Digital and analog switching characteristics of InGaZnO memristor depending on top electrode material for neuromorphic system JT Jang, J Min, Y Hwang, SJ Choi, DM Kim, H Kim, DH Kim IEEE Access 8, 192304-192311, 2020 | 29 | 2020 |
| Incremental drain-voltage-ramping training method for ferroelectric field-effect transistor synaptic devices MC Nguyen, K Lee, S Kim, S Youn, Y Hwang, H Kim, R Choi, D Kwon IEEE Electron Device Letters 43 (1), 17-20, 2021 | 19 | 2021 |
| Effect of the gate dielectric layer of flexible InGaZnO synaptic thin-film transistors on learning behavior S Park, JT Jang, Y Hwang, H Lee, WS Choi, D Kang, C Kim, H Kim, ... ACS Applied Electronic Materials 3 (9), 3972-3979, 2021 | 17 | 2021 |
| Effect of Threshold Voltage Window and Variation of Organic Synaptic Transistor for Neuromorphic System Y Hwang, JH Jeon, J Lee, J Yoon, FS Kim, H Kim Journal of Nanoscience and Nanotechnology 21 (8), 4303-4309, 2021 | 2 | 2021 |
| Threshold learning algorithm for memristive neural network with binary switching behavior S Youn, Y Hwang, TH Kim, S Kim, H Hwang, J Park, H Kim Neural Networks, 106355, 2024 | | 2024 |
Hyungjin KimAssociate Professor, Hanyang UniversityAdresse e-mail validée de hanyang.ac.kr
