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Anne Hémeryck
Anne Hémeryck
LAAS-CNRS
Adresse e-mail validée de laas.fr
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Synthesis, structural studies, theoretical calculations, and linear and nonlinear optical properties of terpyridyl lanthanide complexes: new evidence for the contribution of f …
K Sénéchal-David, A Hemeryck, N Tancrez, L Toupet, JAG Williams, ...
Journal of the American Chemical Society 128 (37), 12243-12255, 2006
1322006
Ambient Humidity Influence on CO Detection with SnO2 Gas Sensing Materials. A Combined DRIFTS/DFT Investigation
S Wicker, M Guiltat, U Weimar, A Hémeryck, N Barsan
The Journal of Physical Chemistry C 121 (45), 25064-25073, 2017
992017
Simulation of single particle displacement damage in silicon–Part II: Generation and long-time relaxation of damage structure
A Jay, M Raine, N Richard, N Mousseau, V Goiffon, A Hémeryck, ...
IEEE Transactions on Nuclear Science 64 (1), 141-148, 2016
742016
On the early stage of aluminum oxidation: An extraction mechanism via oxygen cooperation
C Lanthony, JM Ducéré, MD Rouhani, A Hemeryck, A Estève, C Rossi
The Journal of chemical physics 137 (9), 2012
622012
A computational chemist approach to gas sensors: Modeling the response of SnO2 to CO, O2, and H2O Gases
JM Ducéré, A Hemeryck, A Estève, MD Rouhani, G Landa, P Ménini, ...
Journal of computational chemistry 33 (3), 247-258, 2012
622012
Elementary surface chemistry during CuO/Al nanolaminate-thermite synthesis: copper and oxygen deposition on aluminum (111) surfaces
C Lanthony, M Guiltat, JM Ducéré, A Verdier, A Hémeryck, ...
ACS applied materials & interfaces 6 (17), 15086-15097, 2014
612014
Diffusion of oxygen atom in the topmost layer of the Si (1 0 0) surface: Structures and oxidation kinetics
A Hemeryck, N Richard, A Estève, MD Rouhani
Surface science 601 (11), 2339-2343, 2007
402007
Difficulty for oxygen to incorporate into the silicon network during initial O2 oxidation of Si (100)-(2× 1)
A Hemeryck, AJ Mayne, N Richard, A Estève, YJ Chabal, ...
The Journal of chemical physics 126 (11), 2007
402007
Finding reaction pathways and transition states: r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches
A Jay, C Huet, N Salles, M Gunde, L Martin-Samos, N Richard, G Landa, ...
Journal of Chemical Theory and Computation 16 (10), 6726-6734, 2020
362020
Basics of semiconducting metal oxide–based gas sensors
A Oprea, D Degler, N Barsan, A Hemeryck, J Rebholz
Gas sensors based on conducting metal oxides, 61-165, 2019
342019
Insight into the bonding of silanols to oxidized aluminum surfaces
M Poberžnik, D Costa, A Hemeryck, A Kokalj
The Journal of Physical Chemistry C 122 (17), 9417-9431, 2018
302018
Nanoindentation of NiAl and Ni3Al crystals on (100),(110), and (111) surfaces: A molecular dynamics study
R Seymour, A Hemeryck, K Nomura, W Wang, RK Kalia, A Nakano, ...
Applied Physics Letters 104 (14), 2014
292014
DFT-D study of adsorption of diaminoethane and propylamine molecules on anatase (101) TiO2 surface
A Hémeryck, A Motta, C Lacaze-Dufaure, D Costa, P Marcus
Applied Surface Science 426, 107-115, 2017
282017
Role of alumina coatings for selective and controlled bonding of DNA on technologically relevant oxide surfaces
T Calais, B Playe, JM Ducéré, JF Veyan, S Rupich, A Hemeryck, ...
The Journal of Physical Chemistry C 119 (41), 23527-23543, 2015
272015
Simulation of single-particle displacement damage in silicon—Part III: First principle characterization of defect properties
A Jay, A Hémeryck, N Richard, L Martin-Samos, M Raine, A Le Roch, ...
IEEE Transactions on Nuclear Science 65 (2), 724-731, 2018
252018
Fundamental steps towards interface amorphization during silicon oxidation: Density functional theory calculations
A Hémeryck, A Estève, N Richard, M Djafari Rouhani, YJ Chabal
Physical Review B—Condensed Matter and Materials Physics 79 (3), 035317, 2009
202009
Dioxygen molecule adsorption and oxygen atom diffusion on clean and defective aluminum (111) surface using first principles calculations
M Guiltat, M Brut, S Vizzini, A Hémeryck
Surface Science 657, 79-89, 2017
182017
A kinetic Monte Carlo study of the initial stage of silicon oxidation: Basic mechanisms-induced partial ordering of the oxide interfacial layer
A Hémeryck, A Estève, N Richard, MD Rouhani, G Landa
Surface Science 603 (13), 2132-2137, 2009
182009
Asymmetric diffusion as a key mechanism in Ni/Al energetic multilayer processing: A first principles study
M Petrantoni, A Hemeryck, JM Ducéré, A Estève, C Rossi, MD Rouhani, ...
Journal of Vacuum Science & Technology A 28 (6), L15-L17, 2010
172010
Active oxidation: Silicon etching and oxide decomposition basic mechanisms using density functional theory
A Hemeryck, N Richard, A Estève, MD Rouhani
Surface science 601 (9), 2082-2088, 2007
172007
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