Rainer Waser
Rainer Waser
Professur Elektronische Materialien, RWTH Aachen University
Adresse e-mail validée de iwe.rwth-aachen.de - Page d'accueil
Citée par
Citée par
Nanoionics-based resistive switching memories
R Waser, M Aono
Nanoscience And Technology: A Collection of Reviews from Nature Journals …, 2010
Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges
R Waser, R Dittmann, G Staikov, K Szot
Advanced materials 21 (25-26), 2632-2663, 2009
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO 3
K Szot, W Speier, G Bihlmayer, R Waser
Nature materials 5 (4), 312-320, 2006
Nanoelectronics and information technology
R Waser
Wiley-VCH Verlag GmbH, 2003
Resistive switching mechanism of thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 033715, 2005
Complementary resistive switches for passive nanocrossbar memories
E Linn, R Rosezin, C Kügeler, R Waser
Nature materials 9 (5), 403-406, 2010
Electrochemical metallization memories—fundamentals, applications, prospects
I Valov, R Waser, JR Jameson, MN Kozicki
Nanotechnology 22 (25), 254003, 2011
dc electrical degradation of perovskite‐type titanates: I, Ceramics
R Waser, T Baiatu, KH Härdtl
Journal of the American Ceramic Society 73 (6), 1645-1653, 1990
Electrical properties of the grain boundaries of oxygen ion conductors: acceptor-doped zirconia and ceria
X Guo, R Waser
Progress in Materials Science 51 (2), 151-210, 2006
Nanotechnology: A gentle introduction to the next big idea
MA Ratner, D Ratner, R Waser
Prentice Hall Professional, 2003
Chemical solution deposition of electronic oxide films
RW Schwartz, T Schneller, R Waser
Comptes Rendus Chimie 7 (5), 433-461, 2004
The dielectric response as a function of temperature and film thickness of fiber-textured thin films grown by chemical vapor deposition
C Basceri, SK Streiffer, AI Kingon, R Waser
Journal of Applied Physics 82 (5), 2497-2504, 1997
Electroceramic materials
N Setter, R Waser
Acta materialia 48 (1), 151-178, 2000
Dc electrical degradation of perovskite‐type titanates: III, a model of the mechanism
T Baiatu, R Waser, KH Härdtl
Journal of the American Ceramic Society 73 (6), 1663-1673, 1990
Bipolar and Unipolar Resistive Switching in Cu-Doped
C Schindler, SCP Thermadam, R Waser, MN Kozicki
IEEE Transactions on Electron Devices 54 (10), 2762-2768, 2007
Bulk conductivity and defect chemistry of acceptor‐doped strontium titanate in the quenched state
R Waser
Journal of the American Ceramic Society 74 (8), 1934-1940, 1991
Leakage currents in thin films for ultrahigh-density dynamic random access memories
GW Dietz, M Schumacher, R Waser, SK Streiffer, C Basceri, AI Kingon
Journal of applied physics 82 (5), 2359-2364, 1997
Nanobatteries in redox-based resistive switches require extension of memristor theory
I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ...
Nature communications 4 (1), 1-9, 2013
Theoretical current-voltage characteristics of ferroelectric tunnel junctions
H Kohlstedt, NA Pertsev, JR Contreras, R Waser
Physical Review B 72 (12), 125341, 2005
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ...
Nature communications 5 (1), 1-9, 2014
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20