Alain Le Corre
Alain Le Corre
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Cited by
Cited by
Transparent optical packet switching: The European ACTS KEOPS project approach
C Guillemot, M Renaud, P Gambini, C Janz, I Andonovic, R Bauknecht, ...
Journal of lightwave technology 16 (12), 2117, 1998
Relationship between self‐organization and size of InAs islands on InP (001) grown by gas‐source molecular beam epitaxy
A Ponchet, A Le Corre, H L’haridon, B Lambert, S Salaün
Applied physics letters 67 (13), 1850-1852, 1995
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
High-gain and low-threshold InAs quantum-dot lasers on InP
P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ...
Applied Physics Letters 87 (24), 243107, 2005
A study of the structure of highly concentrated phases of DNA by X-ray diffraction
D Durand, J Doucet, F Livolant
Journal de Physique II 2 (9), 1769-1783, 1992
Decomposition mechanisms of trimethylgallium
CA Larsen, NI Buchan, SH Li, GB Stringfellow
Journal of crystal growth 102 (1-2), 103-116, 1990
Strain in InAs islands grown on InP (001) analyzed by Raman spectroscopy
J Groenen, A Mlayah, R Carles, A Ponchet, A Le Corre, S Salaün
Applied physics letters 69 (7), 943-945, 1996
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ...
Journal of crystal growth 251 (1-4), 230-235, 2003
Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors
B Lambert, A Le Corre, Y Toudic, C Lhomer, G Grandpierre, M Gauneau
Journal of Physics: Condensed Matter 2 (2), 479, 1990
Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP (001) by gas source molecular beam epitaxy
A Ponchet, A Le Corre, A Godefroy, S Salaün, A Poudoulec
Journal of crystal growth 153 (3-4), 71-80, 1995
Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP/sub x/Sb/sub (1-x)/layers on
A Guivarc'h, J Caulet, A Le Corre
Electronics Letters 25 (16), 1050-1052, 1989
Schottky and field‐effect transistor fabrication on InP and GaInAs
S Loualiche, H L’haridon, A Le Corre, D Lecrosnier, M Salvi, ...
Applied physics letters 52 (7), 540-542, 1988
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 123509, 2013
Spreading of non volatile liquids on smooth solid surfaces: role of long range forces
L Leger, M Erman, AM Guinet-Picart, D Ausserre, C Strazielle, JJ Benattar, ...
Revue de Physique Appliquée 23 (6), 1047-1054, 1988
Nuclear data sheets for A= 37
J Cameron, J Chen, B Singh, N Nica
Nuclear Data Sheets 113 (2), 365-514, 2012
Erbium-doped GaAs light-emitting diode at 1.54 mu m
A Rolland, A Le Corre, PN Favennec, M Gauneau, B Lambert, ...
Electronics Letters 24 (15), 956-958, 1988
Photonic doppler velocimetry in shock physics experiments
P Mercier, J Benier, A Azzolina, JM Lagrange, D Partouche
Journal de Physique IV (Proceedings) 134, 805-812, 2006
Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection
C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ...
Semiconductor science and technology 20 (5), 459, 2005
Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures
J Rodière, L Lombez, A Le Corre, O Durand, JF Guillemoles
Applied Physics Letters 106 (18), 183901, 2015
Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H Folliot, S Loualiche, B Lambert, V Drouot, A Le Corre
Physical Review B 58 (16), 10700, 1998
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