Fluorocarbon high-density plasmas. II. Silicon dioxide and silicon etching using CF [sub 4] and CHF [sub 3] GS Oerhlein, Y Zhang, D Vender, O Joubert
J. Vac. Sci. Technol. A 12, 333, 1994
214 * 1994 Oxygen atom actinometry reinvestigated: Comparison with absolute measurements by resonance absorption at 130 nm JP Booth, O Joubert, J Pelletier, N Sadeghi
Journal of applied physics 69 (2), 618-626, 1991
152 1991 New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes G Cunge, B Pelissier, O Joubert, R Ramos, C Maurice
Plasma Sources Science and Technology 14 (3), 599, 2005
132 2005 The etching of polymers in oxygen‐based plasmas: A parametric study O Joubert, J Pelletier, Y Arnal
Journal of applied physics 65 (12), 5096-5100, 1989
129 1989 Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas N Posseme, T Chevolleau, T David, M Darnon, O Louveau, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
103 2007 Ion flux composition in G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
95 2002 Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists E Pargon, K Menguelti, M Martin, A Bazin, O Chaix-Pluchery, C Sourd, ...
Journal of applied physics 105 (9), 2009
94 2009 Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, M Surendra
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994
93 1994 Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma O Joubert, GS Oehrlein, Y Zhang
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (3 …, 1994
93 1994 Influence of pattern density in nanoimprint lithography C Gourgon, C Perret, G Micouin, F Lazzarino, JH Tortai, O Joubert, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
86 2003 Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 … FH Bell, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997
82 1997 Etching mechanisms of low-k SiOCH and selectivity to SiCH and N Posseme, T Chevolleau, O Joubert, L Vallier, P Mangiagalli
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
77 2003 Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing C Petit-Etienne, M Darnon, L Vallier, E Pargon, G Cunge, F Boulard, ...
Journal of Vacuum Science & Technology B 28 (5), 926-934, 2010
76 2010 Cleaning aluminum fluoride coatings from plasma reactor walls in SiCl4/Cl2 plasmas R Ramos, G Cunge, B Pelissier, O Joubert
Plasma Sources Science and Technology 16 (4), 711, 2007
73 2007 X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes L Desvoivres, L Vallier, O Joubert
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
73 2001 Microstructure and electrical characterizations of yttrium oxide and yttrium silicate thin films deposited by pulsed liquid-injection plasma-enhanced metal-organic chemical … C Durand, C Dubourdieu, C Vallée, V Loup, M Bonvalot, O Joubert, ...
Journal of applied physics 96 (3), 1719-1729, 2004
72 2004 Effects of ion bombardment and chemical reaction on wafer temperature during plasma etching A Durandet, O Joubert, J Pelletier, M Pichot
Journal of applied physics 67 (8), 3862-3866, 1990
72 1990 Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas X Detter, R Palla, I Thomas-Boutherin, E Pargon, G Cunge, O Joubert, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
71 2003 Investigation of selective SiO2 ‐to‐Si etching in an inductively coupled high‐density plasma using fluorocarbon gases FH Bell, O Joubert, GS Oehrlein, Y Zhang, D Vender
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (6 …, 1994
70 1994 Etching mechanisms of HfO2, SiO2, and poly-Si substrates in BCl3 plasmas E Sungauer, E Pargon, X Mellhaoui, R Ramos, G Cunge, L Vallier, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
67 2007 
Raphael Ramosresearcher, CEA LITEN (Grenoble)Adresse e-mail validée de cea.fr
