Si doping of vapor–liquid–solid GaAs nanowires: N-type or p-type? H Hijazi, G Monier, E Gil, A Trassoudaine, C Bougerol, C Leroux, ... Nano Letters 19 (7), 4498-4504, 2019 | 30 | 2019 |
Osteochondroma of the peroneal tubercle: a report of two cases MA Martin, L Garcia, H Hijazi, MM Sanchez International orthopaedics 19, 405-407, 1995 | 24 | 1995 |
Dynamics of Gold Droplet Formation on SiO2/Si(111) Surface H Hijazi, F Leroy, G Monier, G Grégoire, E Gil, A Trassoudaine, ... The Journal of Physical Chemistry C 124 (22), 11946-11951, 2020 | 22 | 2020 |
Influence of silicon on the nucleation rate of GaAs nanowires on silicon substrates H Hijazi, VG Dubrovskii, G Monier, E Gil, C Leroux, G Avit, ... The Journal of Physical Chemistry C 122 (33), 19230-19235, 2018 | 17 | 2018 |
Be, Te, and Si doping of GaAs nanowires: Theory and experiment VG Dubrovskii, H Hijazi, NI Goktas, RR LaPierre The Journal of Physical Chemistry C 124 (31), 17299-17307, 2020 | 15 | 2020 |
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation Y André, NI Goktas, G Monier, H Hijazi, H Mehdi, C Bougerol, L Bideux, ... Nano Express 1 (2), 020019, 2020 | 7 | 2020 |
Effect of arsenic depletion on the silicon doping of vapor–liquid–solid GaAs nanowires VG Dubrovskii, H Hijazi physica status solidi (RRL)–Rapid Research Letters 14 (6), 2000129, 2020 | 7 | 2020 |
Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires H Hijazi, M Zeghouane, F Bassani, P Gentile, B Salem, VG Dubrovskii Nanotechnology 31 (40), 405602, 2020 | 5 | 2020 |
Oscillations of as concentration and electron-to-hole ratio in Si-doped GaAs nanowires VG Dubrovskii, H Hijazi Nanomaterials 10 (5), 833, 2020 | 5 | 2020 |
Long catalyst-free InAs nanowires grown on silicon by HVPE G Grégoire, E Gil, M Zeghouane, C Bougerol, H Hijazi, D Castelluci, ... CrystEngComm 23 (2), 378-384, 2021 | 4 | 2021 |
Ultra-wideband 3D-printed vivaldi array for in-band full-duplex applications with a grating lobes reduction approach H Hijazi, M Le Roy, R Lababidi, D Le Jeune, A Pérennec AEU-International Journal of Electronics and Communications 171, 154885, 2023 | 2 | 2023 |
3D-Printed Ultra-Wideband In-Band Full-Duplex Antenna System with Grating Lobes Reduction H Hijazi, M Le Roy, R Lababidi, D Le Jeune, A Pérennec 2022 International Conference on Microelectronics (ICM), 86-89, 2022 | 2 | 2022 |
Charge and spin transport over record distances in GaAs metallic -type nanowires H Hijazi, D Paget, G Monier, G Grégoire, J Leymarie, E Gil, F Cadiz, ... Physical Review B 103 (19), 195314, 2021 | 2 | 2021 |
Comprehensive model toward optimization of SAG In-rich InGaN nanorods by hydride vapor phase epitaxy H Hijazi, M Zeghouane, J Jridi, E Gil, D Castelluci, VG Dubrovskii, ... Nanotechnology 32 (15), 155601, 2021 | 2 | 2021 |
Limits of III–V nanowire growth VG Dubrovskii, AS Sokolovskii, H Hijazi Technical Physics Letters 46, 859-863, 2020 | 2 | 2020 |
Anomalous ambipolar transport in depleted GaAs nanowires H Hijazi, D Paget, ACH Rowe, G Monier, K Lahlil, E Gil, A Trassoudaine, ... Physical Review B 105 (19), 195204, 2022 | 1 | 2022 |
HVPE-grown GaAs nanowires: growth modeling, passivation and transport properties H Hijazi Université Clermont Auvergne [2017-2020], 2019 | 1 | 2019 |
Monolithic integration of GaAs based compounds on silicon platform for photonic and optoelectronic devices T Baron, V Letka, H Hijazi, M Chobé, L Mallet-Dida, M Martin, J Moeyaert, ... Smart Photonic and Optoelectronic Integrated Circuits 2024, PC128900H, 2024 | | 2024 |
Spin precession of light holes in the spin-orbit field of strained GaAs nanowires D Paget, T Amand, H Hijazi, ACH Rowe, G Monier, E Gil, F Cadiz, ... Physical Review B 108 (20), 205402, 2023 | | 2023 |
III-V monolithic integration for optoelectronic devices and new developments on 2D materials T Baron, V Letka, H Hijazi, H Mehdi, LM Dida, P Hauchecorne, M Martin, ... 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC), 72-73, 2023 | | 2023 |