Follow
Saeed Haji-Nasiri
Saeed Haji-Nasiri
Associate Professor of Electrical Engineering, Qazvin Islamic Azad University (QIAU)
Verified email at qiau.ac.ir
Title
Cited by
Cited by
Year
Stability analysis in graphene nanoribbon interconnects
SH Nasiri, MK Moravvej-Farshi, R Faez
IEEE Electron Device Letters 31 (12), 1458-1460, 2010
1042010
Improving the electrical characteristics of nanoscale triple-gate junctionless FinFET using gate oxide engineering
NB Bousari, MK Anvarifard, S Haji-Nasiri
AEU-International Journal of Electronics and Communications 108, 226-234, 2019
762019
Compact formulae for number of conduction channels in various types of graphene nanoribbons at various temperatures
SH Nasiri, R Faez, MK Moravvej-Farshi
Modern Physics Letters B 26 (01), 1150004, 2012
472012
A novel graphene nanoribbon field effect transistor with two different gate insulators
MA Eshkalak, R Faez, S Haji-Nasiri
Physica E: Low-dimensional Systems and Nanostructures 66, 133-139, 2015
412015
Stability analysis in multiwall carbon nanotube bundle interconnects
S Haji-Nasiri, R Faez, MK Moravvej-Farshi
Microelectronics Reliability 52 (12), 3026-3034, 2012
242012
Time domain analysis of graphene nanoribbon interconnects based on transmission line model
NS HAJI, FMK MORAVVEJ, R Faez
Iranian Journal of Electrical and Electronic Engineering 8 (1), 37-44, 2012
242012
Benefitting from high-κ spacer engineering in balistic triple-gate junctionless FinFET-a full quantum study
NB Bousari, MK Anvarifard, S Haji-Nasiri
Silicon 12, 2221-2228, 2020
192020
Spin-dependent electronic transport properties of transition metal atoms doped α-armchair graphyne nanoribbons
S Fotoohi, S Haji-Nasiri
Physica E: Low-dimensional Systems and Nanostructures 98, 159-167, 2018
162018
Crosstalk bandwidth and stability analysis in graphene nanoribbon interconnects
A Bagheri, M Ranjbar, S Haji-Nasiri, S Mirzakuchaki
Microelectronics Reliability 55 (8), 1262-1268, 2015
152015
Doping induced diode behavior with large rectifying ratio in graphyne nanoribbons device
S Haji-Nasiri, S Fotoohi
Physics Letters A 382 (39), 2894-2899, 2018
142018
The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons
A Mohammadi, S Haji-Nasiri
Physics Letters A 382 (15), 1040-1046, 2018
132018
Modelling and analysis of crosstalk induced noise effects in bundle SWCNT interconnects and its impact on signal stability
A Bagheri, M Ranjbar, S Haji-Nasiri, S Mirzakuchaki
Journal of Computational Electronics 16, 845-855, 2017
132017
Vacancy Defects Induced Magnetism in Armchair Graphdiyne Nanoribbon
S Fotoohi, S Haji Nasiri
Journal of Optoelectronical Nanostructures 4 (4), 15-38, 2019
72019
A novel graphene nanoribbon field effect transistor with two different gate insulators, Phys. E Low dimens
MA Eshkalak, R Faez, S Haji-Nasiri
Syst. Nanostruct 66, 2015
72015
Stability analysis in CNTFETs
S Haji-Nasiri, MK Moravvej-Farshi
IEEE electron device letters 34 (2), 301-303, 2013
72013
γ-Graphyne rectifier and NDR tunable by doping, line edge roughness and twist
M Golzani, M Poliki, S Haji-Nasiri
Computational Materials Science 190, 110303, 2021
62021
Electronic and transport characteristics of vacancy and nitrogen-doped graphene nanoribbon rotational switch
M Poliki, S Haji-Nasiri
Applied Physics A 125 (9), 658, 2019
62019
DC characteristic analysis of single-electron transistor based on MIB model
K Feizi, SH Nasiri
2010 International Conference on Nanotechnology and Biosensors IPCBEE 2, 2010
52010
The effect of line edge roughness defect on the electronic transport properties of Boron-doped graphene nanoribbon rectifier
M Golzani, M Poliki, S Haji-Nasiri
Applied Physics A 126, 1-10, 2020
42020
The effect of line-edge roughness on electronic transport characteristics of a graphene nanoribbon rectifier
M Golzani, S Haji-Nasiri
Journal of Electronic Materials 47 (10), 6067-6077, 2018
42018
The system can't perform the operation now. Try again later.
Articles 1–20