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Rafael Dalmau
Rafael Dalmau
Senior Scientist, HexaTech, Inc
Adresse e-mail validée de hexatechinc.com
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Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar
physica status solidi c 8 (7‐8), 2031-2033, 2011
2062011
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 2012
1842012
Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1672009
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1652011
Seeded growth of AlN bulk single crystals by sublimation
R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
1612002
Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition
A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar
Journal of Applied Physics 108 (4), 2010
1562010
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1512012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1492012
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar
Journal of Applied Physics 104 (1), 2008
1482008
The growth and optical properties of large, high-quality AlN single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of applied physics 96 (10), 5870-5876, 2004
1312004
Band-edge exciton states in AlN single crystals and epitaxial layers
L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ...
Applied physics letters 85 (19), 4334-4336, 2004
1072004
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 2013
1052013
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
942012
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 2014
862014
X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: thermal and hydrothermal evolution
R Dalmau, R Collazo, S Mita, Z Sitar
Journal of electronic materials 36, 414-419, 2007
842007
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...
Applied physics letters 113 (1), 2018
832018
High-temperature electromechanical characterization of AlN single crystals
T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang
IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015
822015
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...
Applied Physics Letters 112 (8), 2018
712018
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar
Applied Physics Letters 93 (13), 2008
652008
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
HJ Kim, S Choi, D Yoo, JH Ryou, RD Dupuis, RF Dalmau, P Lu, Z Sitar
Applied Physics Letters 93 (2), 2008
572008
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