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DEBBICHI Mourad
DEBBICHI Mourad
Associate Professor- University of Monastir- Tunisia
Adresse e-mail validée de fsm.rnu.tn
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Theoretical study of electronic and optical properties of BN, GaN and BxGa1− xN in zinc blende and wurtzite structures
A Said, M Debbichi, M Said
Optik 127 (20), 9212-9221, 2016
602016
Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials
A Ben Fredj, M Debbichi, M Said
Microelectronics journal 38 (8), 860-870, 2007
402007
First-Principles Study of Monolayer - as a Promising Anode Material for /-ion Batteries
M Debbichi, A Mallah, MH Dhaou, S Lebègue
Physical Review Applied 16 (2), 024016, 2021
282021
Structural, electronic and thermodynamic properties of britholites Ca10− xLax (PO4) 6− x (SiO4) xF2 (0≤ x≤ 6): Experiment and theory
H Njema, M Debbichi, K Boughzala, M Said, K Bouzouita
Materials Research Bulletin 51, 210-216, 2014
262014
First principles study of the crystal, electronic structure, and diffusion mechanism of polaron-Na vacancy of Na3MnPO4CO3 for Na-ion battery applications
M Debbichi, L Debbichi, VA Dinh, S Lebègue
Journal of Physics D: Applied Physics 50 (4), 045502, 2016
252016
Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering
M Debbichi, M Souissi, A Fouzri, G Schmerber, M Said, M Alouani
Journal of Alloys and Compounds 598, 120-125, 2014
212014
Energy-band structure and optical gain in strained InAs (N)/GaSb/InAs (N) quantum well lasers.
S Ridene, M Debbichi, M Said, H Bouchriha
Journal of Applied Physics 104 (6), 2008
202008
Elastic properties and optical phonon frequencies of zinc-blende ScxGa1− xN
Y Oussaifi, AB Fredj, M Debbichi, N Bouarissa, M Said
Semiconductor science and technology 22 (6), 641, 2007
192007
Hybrid functional study of structural, electronic and magnetic properties of S-doped ZnO with and without neutral vacancy
M Debbichi, T Sakhraoui, L Debbichi, M Said
Journal of alloys and compounds 578, 602-608, 2013
182013
Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the kp method
SB Rejeb, M Debbichi, M Said, A Gassenq, E Tournié, P Christol
Journal of Physics D: Applied Physics 43 (32), 325102, 2010
182010
Optical performances of InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission
S Ben Rejeb, M Debbichi, M Said, A Gassenq, E Tournié, P Christol
Journal of Applied Physics 108 (9), 2010
172010
Frustrated antiferromagnetic triangular lattice with Dzyaloshinskii–Moriya interaction: Ground states, spin waves, skyrmion crystal, phase transition
S El Hog, IF Sharafullin, HT Diep, H Garbouj, M Debbichi, M Said
Journal of Magnetism and Magnetic Materials 563, 169920, 2022
152022
InAsN/GaSb/InAsN ‘W’quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations
M Debbichi, AB Fredj, Y Cuminal, JL Lazzari, S Ridene, H Bouchriha, ...
Journal of Physics D: Applied Physics 41 (21), 215106, 2008
132008
Crystal and electronic structures of nitridophosphate compounds as cathode materials for Na-ion batteries
M Debbichi, S Lebègue
Physical Review B 92 (8), 085127, 2015
122015
A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation
M Debbichi, S Ridene, H Bouchriha, AB Fredj, M Said, JL Lazzari, ...
Semiconductor science and technology 24 (8), 085010, 2009
122009
Rietveld refinement, electronic structure and ionic conductivity of Sr4La6 (SiO4) 6F2 and Sr4La6 (SiO4) 6O ceramics
K Boughzala, M Debbichi, H Njema, K Bouzouita
Journal of Solid State Chemistry 239, 84-90, 2016
112016
[h h l] Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design
AB Ahmed, S Ridene, M Debbichi, M Said, H Bouchriha
Semiconductor science and technology 28 (6), 065006, 2013
112013
Tuning the magnetic and electronic properties of monolayer chromium tritelluride through strain engineering
M Debbichi, L Debbichi, S Lebègue
Physics Letters A 384 (27), 126684, 2020
102020
Controlling the stability and the electronic structure of transition metal dichalcogenide single layer under chemical doping
M Debbichi, L Debbichi, S Lebègue
Physics Letters A 383 (24), 2922-2927, 2019
102019
A new ternary pentagonal monolayer based on Bi with large intrinsic Dzyaloshinskii–Moriya interaction
M Debbichi, H Said, H Garbouj, S El Hog, VA Dinh
Journal of Physics D: Applied Physics 55 (1), 015002, 2021
92021
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