| Investigation of electrical characteristic behavior induced by channel-release process in stacked nanosheet gate-all-around MOSFETs S Kim, M Kim, D Ryu, K Lee, S Kim, J Lee, R Lee, S Kim, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (6), 2648-2652, 2020 | 38 | 2020 |
| Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure D Ryu, M Kim, J Yu, S Kim, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (4), 1859-1863, 2020 | 28 | 2020 |
| Design and optimization of triple-k spacer structure in two-stack nanosheet FET from OFF-state leakage perspective D Ryu, M Kim, S Kim, Y Choi, J Yu, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (3), 1317-1322, 2020 | 28 | 2020 |
| Semiconductor devices and inverter having the same MH Kim, CW Noh, KH Cho, MG Kang, S Maeda US Patent 9,966,376, 2018 | 24 | 2018 |
| Investigation of device performance for fin angle optimization in FinFET and gate-all-around FETs for 3 nm-node and beyond S Kim, K Lee, S Kim, M Kim, JH Lee, S Kim, BG Park IEEE Transactions on Electron Devices 69 (4), 2088-2093, 2022 | 17 | 2022 |
| Semiconductor device and method of fabricating the same JB Kim, M Kim, HS Kim, TJ Park, KH Lee, CW Noh, MTLU QUE, HB Park, ... US Patent App. 16/037,922, 2019 | 17 | 2019 |
| Semiconductor device having first and second gate electrodes and method of manufacturing the same Y Dong, MH Kim, KH Cho, S Maeda, HS Oh US Patent 9,576,959, 2017 | 17 | 2017 |
| Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique J Lee, R Lee, S Kim, K Lee, HM Kim, S Kim, M Kim, S Kim, JH Lee, ... Solid-State Electronics 164, 107701, 2020 | 16 | 2020 |
| Semiconductor devices including contact patterns having a rising portion and a recessed portion S Park, M Kim, W Kim, K Cho, H Jun, D Kim, HA Daewon US Patent 9,536,968, 2017 | 15 | 2017 |
| Negative capacitance effect on MOS structure: Influence of electric field variation K Lee, J Lee, S Kim, R Lee, S Kim, M Kim, JH Lee, S Kim, BG Park IEEE Transactions on Nanotechnology 19, 168-171, 2020 | 12 | 2020 |
| Double-gated ferroelectric-gate field-effect-transistor for processing in memory M Kim, K Lee, S Kim, JH Lee, BG Park, D Kwon IEEE Electron Device Letters 42 (11), 1607-1610, 2021 | 11 | 2021 |
| Semiconductor device KH Cho, S Park, BH Hong, T Fukai, MH Kim, WG Kim, SH Park, D Kim, ... US Patent 9,331,199, 2016 | 11 | 2016 |
| Comprehensive TCAD-based validation of interface trap-assisted ferroelectric polarization in ferroelectric-gate field-effect transistor memory K Lee, S Kim, M Kim, JH Lee, D Kwon, BG Park IEEE Transactions on Electron Devices 69 (3), 1048-1053, 2022 | 10 | 2022 |
| Semiconductor devices and methods of manufacturing the same MH Kim, SH Kim, BH Hong, KH Cho, T Fukai, S Maeda, H Fukutome US Patent App. 15/209,328, 2017 | 10 | 2017 |
| Integrated circuit device MH Kim, S Whang, CW Noh, D Kim, HS Oh US Patent 10,396,205, 2019 | 9 | 2019 |
| Analysis on fully depleted negative capacitance field-effect transistor (NCFET) based on electrostatic potential difference K Lee, J Lee, S Kim, S Kim, M Kim, S Kim, BG Park 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 422-424, 2019 | 5 | 2019 |
| Spiking neural network with weight-sharing synaptic array for multi-input processing S Song, M Kim, B Jeon, D Ryu, S Kim, K Lee, JH Lee, JJ Kim, W Shim, ... IEEE Electron Device Letters 43 (10), 1657-1660, 2022 | 4 | 2022 |
| Floating Fin Shaped Stacked Nanosheet MOSFET for Low Power Logic Application M Kim, S Kim, K Lee, JH Lee, BG Park, D Kwon IEEE Journal of the Electron Devices Society 11, 95-100, 2023 | 3 | 2023 |
| Ferroelectric Field-Effect Transistor Synaptic Device with Hafnium-silicate Interlayer SW Kim, W Shin, M Kim, KR Kwon, J Yim, J Kim, C Han, S Jeong, EC Park, ... IEEE Electron Device Letters, 2023 | 2 | 2023 |
| Investigation on variability of ferroelectric-gate field-effect transistor memory by random spatial distribution of interface trap K Lee, S Kim, M Kim, JH Lee, BG Park, D Kwon IEEE Transactions on Nanotechnology 21, 534-538, 2022 | 2 | 2022 |
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityAdresse e-mail validée de snu.ac.kr
