| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano Letters 15 (7), 4329-4336, 2015 | 174 | 2015 |
| Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ... Nano letters 17 (6), 3919-3925, 2017 | 50 | 2017 |
| Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015 | 42 | 2015 |
| Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018 | 24 | 2018 |
| DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs A Valsaraj, LF Register, E Tutuc, SK Banerjee Journal of Applied Physics 120 (13), 134310, 2016 | 24 | 2016 |
| Interfacial-oxygen-vacancy mediated doping of MoS2 by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015 | 22 | 2015 |
| ReS2-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 245701, 2017 | 11 | 2017 |
| Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ... Journal of Physics D: Applied Physics 50 (38), 383002, 2017 | 10 | 2017 |
| Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations DM Crum, A Valsaraj, JK David, LF Register, SK Banerjee Journal of Applied Physics 120 (22), 224301, 2016 | 7 | 2016 |
| Effect of rotational misalignment on interlayer coupling in a graphene/hBN/graphene van der Waal's heterostructure A Valsaraj, LF Register, SK Banerjee 2016 International Conference on Simulation of Semiconductor Processes and …, 2016 | 3 | 2016 |
| Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee Journal of Applied Physics 126 (10), 105705, 2019 | 2 | 2019 |
| Impact of gate oxide complex band structure on n-channel III–V FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee, B Sahu, Z Krivakopic, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 2 | 2015 |
| Density-functional-theory-based study of monolayer MoS2on oxide A Valsaraj, LF Register, SK Banerjee, J Chang 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 2 | 2014 |
| Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 2 | 2014 |
| Effect of HfO2and Al2O3on monolayer MoS2electronic structure A Valsaraj, J Chang, LF Register, SK Banerjee 72nd Device Research Conference, 87-88, 2014 | 2 | 2014 |
| Devices and defects in two-dimensional materials: outlook and perspectives A Rai, A Roy, A Valsaraj, S Chowdhury, D Taneja, Y Wang, LF Register, ... Defects in Two-Dimensional Materials, 339-401, 2022 | | 2022 |
| Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee arXiv preprint arXiv:1903.12281, 2019 | | 2019 |
| Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications LF Register, GW Burg, CM Corbet, B Fallahazad, S Kang, K Kim, ... ECS Meeting Abstracts, 838, 2017 | | 2017 |
| Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices A Valsaraj | | 2017 |
| Extraction of interlayer coupling and hopping potentials with misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs A Valsaraj, LF Register, SK Banerjee APS March Meeting Abstracts 2017, V1. 001, 2017 | | 2017 |
Leonard F. RegisterProfessor of Electrical and Computer EngineeringAdresse e-mail validée de austin.utexas.edu
