Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano Letters 15 (7), 4329-4336, 2015
137 2015 Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
37 2015 Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...
Nano letters 17 (6), 3919-3925, 2017
36 2017 Interfacial-oxygen-vacancy mediated doping of MoS2 by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee
2015 73rd Annual Device Research Conference (DRC), 189-190, 2015
21 2015 Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ...
ACS applied materials & interfaces 10 (1), 1125-1131, 2018
19 2018 DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs A Valsaraj, LF Register, E Tutuc, SK Banerjee
Journal of Applied Physics 120 (13), 134310, 2016
18 2016 ReS2 -based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ...
Journal of Applied Physics 122 (24), 245701, 2017
9 2017 Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations DM Crum, A Valsaraj, JK David, LF Register, SK Banerjee
Journal of Applied Physics 120 (22), 224301, 2016
7 2016 Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ...
Journal of Physics D: Applied Physics 50 (38), 383002, 2017
6 2017 Effect of rotational misalignment on interlayer coupling in a graphene/hBN/graphene van der Waal's heterostructure A Valsaraj, LF Register, SK Banerjee
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
3 2016 Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53 Ga0.47 As n-channel FinFETs AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee
Journal of Applied Physics 126 (10), 105705, 2019
2 2019 Impact of gate oxide complex band structure on n-channel III–V FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee, B Sahu, Z Krivakopic, ...
2015 International Conference on Simulation of Semiconductor Processes and …, 2015
2 2015 Density-functional-theory-based study of monolayer MoS2 on oxide A Valsaraj, LF Register, SK Banerjee, J Chang
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
2 2014 Semi-classical ensemble Monte Carlo simulator using innovative quantum corrections for nano-scale n-channel FinFETs DM Crum, A Valsaraj, LF Register, SK Banerjee
2014 International Conference on Simulation of Semiconductor Processes and …, 2014
2 2014 Effect of HfO2 and Al2 O3 on monolayer MoS2 electronic structure A Valsaraj, J Chang, LF Register, SK Banerjee
72nd Device Research Conference, 87-88, 2014
2 2014 Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit AA Bhatti, DM Crum, A Valsaraj, LF Register, SK Banerjee
arXiv preprint arXiv:1903.12281, 2019
2019 Resonant Interlayer Tunneling in 2D Van Der Waals-Materials-Based Channel-Dielectric-Channel Systems and Possible Device and Circuit Applications LF Register, GW Burg, CM Corbet, B Fallahazad, S Kang, K Kim, ...
ECS Meeting Abstracts, 838, 2017
2017 Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices A Valsaraj
2017 Extraction of interlayer coupling and hopping potentials with misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs A Valsaraj, LF Register, SK Banerjee
APS March Meeting Abstracts 2017, V1. 001, 2017
2017 Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
arXiv preprint arXiv:1604.06850, 2016
2016 
Leonard F. RegisterProfessor of Electrical and Computer EngineeringAdresse e-mail validée de austin.utexas.edu
